Datasheet > SP000451084

SP000451084

更新时间： 2024-11-11 20:10:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	456K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SP000451084 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.73
Base Number Matches：	1

SP000451084 数据手册

Type

BSC067N06LS3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V_DS

6.7

• Ideal for high frequency switching and sync. rec.

R_DS(on),max

I_D

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R_DS(on)

• Superior thermal resistance

• N-channel, logic level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

BSC067N06LS3 G

Package

Marking

PG-TDSON-8

067N06LS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

V _GS=10 V, T _C=100 °C

Continuous drain current

V _GS=4.5 V, T _C=25 °C

V _GS=4.5 V,

T _C=100 °C

V _GS=10 V, T _A=25 °C,

R _thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

T _C=25 °C

200

Avalanche energy, single pulse⁴⁾

E _AS

V _GS

I _D=50 A, R _GS=25 W

Gate source voltage

±20

¹⁾J-STD20 and JESD22

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

Rev. 2.4

page 1

2013-09-18

12 3 4 5 6 7...10

中文翻译

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