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SP000057021 PDF预览

SP000057021

更新时间: 2024-11-09 03:31:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 324K
描述
CoolMOS Power Transistor

SP000057021 数据手册

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IPP60R099CP  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @ Tj,max  
R DS(on),max  
Q g,typ  
V
650  
0.099  
60  
V
• Worldwide best R ds,on in TO220  
• Ultra low gate charge  
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
PG-TO220  
• Pb-free lead plating; RoHS compliant  
CoolMOS CP is specially designed for:  
• Hard switching SMPS topologies for Server and Telecon  
Type  
Package  
Ordering Code  
Marking  
IPP60R099CP  
PG-TO220  
SP000057021  
6R099  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
31  
19  
Continuous drain current  
A
Pulsed drain current2)  
93  
I D,pulse  
E AS  
I D=11 A, V DD=50 V  
I D=11 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
800  
1.2  
mJ  
2),3)  
2),3)  
E AR  
I AR  
11  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...480 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
255  
-55 ... 150  
60  
static  
AC (f >1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 2.0  
2006-06-19  

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