CXG1213XR

更新时间： 2024-02-07 10:58:02

品牌	Logo	应用领域
索尼 - SONY		射频和微波开关射频开关微波开关光电二极管 ISM频段
页数	文件大小	规格书
9页	181K
描述
High Power DPDT Switch with Logic Control

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CXG1213XR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	LCC12,.08SQ,16
Reach Compliance Code：	unknown	风险等级：	5.84
1dB压缩点：	32 dBm	其他特性：	CMOS COMPATIBLE, IT CAN ALSO OPERATES AT 1920 TO 1980 AND 2110 TO 2170 MHZ
特性阻抗：	50 Ω	构造：	COMPONENT
最大插入损耗：	0.45 dB	最小隔离度：	15 dB
JESD-609代码：	e6/e4	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	12
最大工作频率：	885 MHz	最小工作频率：	830 MHz
最高工作温度：	85 °C	最低工作温度：	-35 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC12,.08SQ,16
电源：	2.8 V	射频/微波设备类型：	DPDT
子类别：	RF/Microwave Switches	表面贴装：	YES
技术：	CMOS	端子面层：	TIN BISMUTH/PALLADIUM
最大电压驻波比：	1.2	Base Number Matches：	1

High Power DPDT Switch with Logic Control

CXG1213XR

Description

This CXG1213XR can be used in wireless communication systems, for example, W-CDMA handsets.

The IC has on-chip logic for operation with 2 CMOS control inputs.

The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit.

(Applications: Antenna switch for cellular handsets, dual-band W-CDMA)

Features

Low insertion loss

2 CMOS compatible control

Package

Small package size: 12-pin XQFN

Structure

GaAs JPHEMT MMIC

Absolute Maximum Ratings

(Ta = 25^°C)

Bias voltage

V^DD

Vctl

Control voltage

Operating temperature Topr –35 to +85

Storage temperature Tstg –65 to +150

^°C

GaAs MMICs are ESD sensitive devices.Special handing precautions are required.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license

by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating

the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

E05X06A61

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