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CXG1173UR PDF预览

CXG1173UR

更新时间: 2024-02-21 22:53:09
品牌 Logo 应用领域
索尼 - SONY 开关射频微波光电二极管ISM频段
页数 文件大小 规格书
5页 39K
描述
High Power SPDT Switch with Logic Control

CXG1173UR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:LCC12,.08SQ,16
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT最大插入损耗:0.65 dB
最小隔离度:18 dBJESD-609代码:e6/e4
安装特点:SURFACE MOUNT功能数量:1
端子数量:12最大工作频率:1980 MHz
最小工作频率:1920 MHz最高工作温度:85 °C
最低工作温度:-35 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC12,.08SQ,16电源:3 V
射频/微波设备类型:DIVERSITY SWITCH子类别:RF/Microwave Switches
表面贴装:YES技术:GAAS
端子面层:TIN BISMUTH/PALLADIUM最大电压驻波比:1.5
Base Number Matches:1

CXG1173UR 数据手册

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CXG1173UR  
High Power SPDT Switch with Logic Control  
Description  
12 pin UQFN (Plastic)  
The CXG1173UR can be used in wireless com-  
munication systems, for example, CDMA handsets,  
W-CDMA handsets, 2.4GHz WLAN.  
The CXG1173UR has on-chip logic for operation  
with 1 CMOS control inputs.  
The Sony J-FET process is used for low insertion  
loss and on-chip logic circuit.  
Features  
Low insertion loss: 0.3dB@900MHz, 0.45dB@1.95GHz  
1 CMOS compatible control line  
Small package size: 12-pin UQFN  
Applications  
Antenna switch for cellular handsets  
W-CDMA, CDMA  
Antenna switch for cellular handsets  
2.4GHz WLAN IEEE 802.11b, 802.11g  
Structure  
GaAs J-FET MMIC  
Absolute Maximum Ratings (Ta = 25°C)  
Bias voltage  
VDD  
Vctl  
Topr  
7
5
V
V
Control voltage  
Operation temperature  
Storage temperature  
–35 to +85 °C  
Tstg –65 to +150 °C  
GaAs MMIC's are ESD sensitive devices. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E03Y12-PS  

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