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SN761210FR PDF预览

SN761210FR

更新时间: 2024-09-12 22:36:51
品牌 Logo 应用领域
德州仪器 - TI 传感器图像传感器消费电路商用集成电路
页数 文件大小 规格书
18页 243K
描述
336- 】 244-pixel ccd image sensor

SN761210FR 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:PLASTIC, QFP-44针数:44
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.69Is Samacsys:N
商用集成电路类型:CONSUMER CIRCUITJESD-30 代码:S-PQFP-G44
长度:10 mm端子数量:44
最高工作温度:45 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP44,.5SQ,32封装形状:SQUARE
封装形式:FLATPACK电源:5 V
认证状态:Not Qualified座面最大高度:2.25 mm
子类别:Other Consumer ICs最大压摆率:41 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:QUAD
宽度:10 mmBase Number Matches:1

SN761210FR 数据手册

 浏览型号SN761210FR的Datasheet PDF文件第2页浏览型号SN761210FR的Datasheet PDF文件第3页浏览型号SN761210FR的Datasheet PDF文件第4页浏览型号SN761210FR的Datasheet PDF文件第5页浏览型号SN761210FR的Datasheet PDF文件第6页浏览型号SN761210FR的Datasheet PDF文件第7页 
TC255P  
336- × 244-PIXEL CCD IMAGE SENSOR  
SOCS057 – JUNE 1996  
DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
Medium-Resolution, Solid-State Image  
Sensor for Low-Cost B/W TV Applications  
324(H) x 243(V) Active Elements in Image  
IAG2  
ADB  
ABG  
IAG1  
1
2
3
4
8
7
6
5
Sensing Area  
10-µm Square Pixels  
Fast Clear Capability  
Electronic Shutter Function From  
1/60–1/50000 s  
Low Dark Current  
SUB  
OUT  
SAG  
SRG  
Electron-Hole Recombination Antiblooming  
Dynamic Range . . . 66 dB Typical  
High Sensitivity  
High Blue Response  
8-Pin Dual-In-Line Plastic Package  
4-mm Image-Area Diagonal  
Solid-State Reliability With No Image  
Burn-In, Residual Imaging, Image  
Distortion, Image Lag, or Microphonics  
High Photoresponse Uniformity  
description  
The TC255P is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special-  
purpose applications where low cost and small size are desired.  
The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve  
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based  
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated  
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.  
The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The  
device can also be operated in an interlace mode, electronically displacing the image-sensing elements during  
the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing  
aliasing.  
One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for  
an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the  
loss of sensitivity and resolution inherent in those technologies.  
The charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance  
charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is  
buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.  
The TC255P uses TI-proprietary virtual-phase technology, which provides devices with high blue response, low  
dark signal, high photoresponse uniformity, and single-phase clocking. The TC255P is characterized for  
operation from –10°C to 45°C.  
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together  
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no  
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent  
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is  
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling  
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
2-1  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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