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SN74VMEH22501A-EP PDF预览

SN74VMEH22501A-EP

更新时间: 2024-01-28 09:02:20
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德州仪器 - TI /
页数 文件大小 规格书
27页 545K
描述
Enhanced Diminishing Manufacturing Sources (DMS) Support, Enhanced Product-Change Notification

SN74VMEH22501A-EP 数据手册

 浏览型号SN74VMEH22501A-EP的Datasheet PDF文件第2页浏览型号SN74VMEH22501A-EP的Datasheet PDF文件第3页浏览型号SN74VMEH22501A-EP的Datasheet PDF文件第4页浏览型号SN74VMEH22501A-EP的Datasheet PDF文件第5页浏览型号SN74VMEH22501A-EP的Datasheet PDF文件第6页浏览型号SN74VMEH22501A-EP的Datasheet PDF文件第7页 
ꢏ ꢍꢐꢑ ꢒ ꢓꢁ ꢑ ꢄꢆ ꢔꢀ ꢌꢕ ꢐꢓ ꢀ ꢒ ꢔꢌꢁꢀ ꢖꢆꢑ ꢄꢆꢔ ꢌꢁꢗ ꢒ ꢘ ꢙ ꢋ ꢍꢐꢑ ꢒ ꢐꢓꢀ ꢒ ꢔꢌꢁꢀ ꢖꢆ ꢑꢄ ꢆ ꢔ  
ꢕꢄ  
SCES625 − FEBRUARY 2005  
DGG OR DGV PACKAGE  
(TOP VIEW)  
D
D
D
D
D
Controlled Baseline  
− One Assembly/Test Site, One Fabrication  
Site  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1OEBY  
1A  
1OEAB  
Enhanced Diminishing Manufacturing  
Sources (DMS) Support  
2
V
CC  
3
1Y  
1B  
Enhanced Product-Change Notification  
4
GND  
2A  
2Y  
GND  
BIAS V  
2B  
5
Qualification Pedigree  
CC  
6
Member of the Texas Instruments  
WidebusFamily  
UBTTransceiver Combines D-Type  
Latches and D-Type Flip-Flops for  
Operation in Transparent, Latched, or  
Clocked Modes  
7
V
V
CC  
CC  
8
2OEBY  
2OEAB  
3B1  
D
9
3A1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
GND  
LE  
3A2  
3A3  
OE  
GND  
3A4  
CLKBA  
GND  
V
CC  
3B2  
3B3  
D
OECCircuitry Improves Signal Integrity  
and Reduces Electromagnetic Interference  
(EMI)  
V
CC  
GND  
3B4  
CLKAB  
D
D
Compliant With VME64, 2eVME, and 2eSST  
Protocols  
Bus Transceiver Split LVTTL Port Provides  
Feedback Path for Control and Diagnostics  
Monitoring  
V
V
CC  
CC  
3A5  
3A6  
GND  
3A7  
3A8  
DIR  
3B5  
3B6  
GND  
3B7  
3B8  
D
D
D
D
I/O Interfaces Are 5-V Tolerant  
B-Port Outputs (−48 mA/64 mA)  
Y and A-Port Outputs (−12 mA/12 mA)  
V
CC  
I
, Power-Up 3-State, and BIAS V  
CC  
off  
Support Live Insertion  
D
Bus Hold on 3A-Port Data Inputs  
D
26-W Equivalent Series Resistor on  
3A Ports and Y Outputs  
D
D
D
D
Flow-Through Architecture Facilitates  
Printed Circuit Board Layout  
Distributed V  
High-Speed Switching Noise  
and GND Pins Minimize  
CC  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Protection Exceeds JESD 22  
− 2000-V Human-Body Model (A114-A)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This  
includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST,  
electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component  
beyond specified performance and environmental limits.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Motorola is a trademark of Motorola, Inc.  
OEC, UBT, and Widebus are trademarks of Texas Instruments.  
ꢒꢩ  
Copyright 2005, Texas Instruments Incorporated  
ꢥꢩ ꢦ ꢥꢞ ꢟꢳ ꢡꢠ ꢤ ꢬꢬ ꢪꢤ ꢢ ꢤ ꢣ ꢩ ꢥ ꢩ ꢢ ꢦ ꢮ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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