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SN74LVT16244BDGV

更新时间： 2024-11-04 23:06:23
品牌 Logo 应用领域
德州仪器 - TI 驱动器输出元件
页数 文件大小 规格书
8页 123K
描述
3.3-V ABT 16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

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SN74LVT16244BDGV 数据手册

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SN54LVT16244B, SN74LVT16244B  
3.3-V ABT 16-BIT BUFFERS/DRIVERS  
WITH 3-STATE OUTPUTS  
SCBS716 – MARCH 2000  
SN54LVT16244B . . . WD PACKAGE  
SN74LVT16244B . . . DGG, DGV, OR DL PACKAGE  
(TOP VIEW)  
Members of the Texas Instruments  
Widebus Family  
State-of-the-Art Advanced BiCMOS  
Technology (ABT) Design for 3.3-V  
Operation and Low Static-Power  
Dissipation  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1OE  
1Y1  
1Y2  
GND  
1Y3  
1Y4  
2OE  
1A1  
1A2  
GND  
1A3  
1A4  
2
3
Support Mixed-Mode Signal Operation  
(5-V Input and Output Voltages With  
4
5
3.3-V V  
)
CC  
6
I
and Power-Up 3-State Support Hot  
7
V
V
off  
CC  
CC  
Insertion  
8
2Y1  
2Y2  
GND  
2Y3  
2Y4  
3Y1  
3Y2  
GND  
3Y3  
3Y4  
2A1  
2A2  
GND  
2A3  
2A4  
3A1  
3A2  
GND  
3A3  
3A4  
9
Support Unregulated Battery Operation  
Down to 2.7 V  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Typical V  
<0.8 V at V  
(Output Ground Bounce)  
OLP  
CC  
= 3.3 V, T = 25°C  
A
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Protection Exceeds JESD 22  
– 2000-V Human-Body Model (A114-A)  
– 200-V Machine Model (A115-A)  
V
V
CC  
CC  
– 1000-V Charged-Device Model (C101)  
4Y1  
4Y2  
GND  
4Y3  
4Y4  
4A1  
4A2  
GND  
4A3  
4A4  
3OE  
Package Options Include Plastic Shrink  
Small-Outline (DL), Thin Shrink  
Small-Outline (DGG), and Thin Very  
Small-Outline (DGV) Packages and 380-mil  
Fine-Pitch Ceramic Flat (WD) Package  
Using 25-mil Center-to-Center Spacings  
4OE  
description  
The ’LVT16244B devices are 16-bit buffers and line drivers designed for low-voltage (3.3-V) V operation, but  
CC  
with the capability to provide a TTL interface to a 5-V system environment. These devices can be used as four  
4-bit buffers, two 8-bit buffers, or one 16-bit buffer. These devices provide true outputs and symmetrical  
active-low output-enable (OE) inputs.  
When V is between 0 and 1.5-V, the devices are in the high-impedance state during power up or power down.  
CC  
However, to ensure the high-impedance state above 1.5-V, OE should be tied to V  
through a pullup resistor;  
CC  
the minimum value of the resistor is determined by the current-sinking capability of the driver.  
These devices are fully specified for hot-insertion applications using I and power-up 3-state. The I circuitry  
off  
off  
disables the outputs, preventing damaging current backflow through the devices when they are powered down.  
The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,  
which prevents driver conflict.  
The SN54LVT16244B is characterized for operation over the full military temperature range of –55°C to 125°C.  
The SN74LVT16244B is characterized for operation from –40°C to 85°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments.  
Copyright 2000, Texas Instruments Incorporated  
UNLESS OTHERWISE NOTED this document contains PRODUCTION  
DATA information current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all  
parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
12345678

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