SN54LVT16240, SN74LVT16240
3.3-V ABT 16-BIT BUFFERS/DRIVERS
WITH 3-STATE OUTPUTS
SCBS717 – APRIL 2000
SN54LVT16240 . . . WD PACKAGE
SN74LVT16240 . . . DGG OR DL PACKAGE
(TOP VIEW)
Members of the Texas Instruments
Widebus Family
State-of-the-Art Advanced BiCMOS
Technology (ABT) Design for 3.3-V
Operation and Low Static-Power
Dissipation
1OE
1Y1
1Y2
GND
1Y3
1Y4
1
2
3
4
5
6
7
8
9
48 2OE
47 1A1
46 1A2
45 GND
44 1A3
43 1A4
Support Mixed-Mode Signal Operation
(5-V Input and Output Voltages With
3.3-V V
)
CC
Support Unregulated Battery Operation
Down to 2.7 V
V
42
V
CC
CC
2Y1
2Y2
41 2A1
40 2A2
39 GND
38 2A3
37 2A4
36 3A1
35 3A2
34 GND
33 3A3
32 3A4
Typical V
<0.8 V at V
(Output Ground Bounce)
OLP
CC
GND 10
2Y3 11
2Y4 12
3Y1 13
3Y2 14
GND 15
3Y3 16
3Y4 17
= 3.3 V, T = 25°C
A
I
and Power-Up 3-State Support Hot
off
Insertion
Distributed V
High-Speed Switching Noise
and GND Pins Minimize
CC
Flow-Through Architecture Optimizes PCB
Layout
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
V
18
31
V
CC
CC
4Y1 19
4Y2 20
GND 21
4Y3 22
30 4A1
29 4A2
28 GND
27 4A3
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
23
24
26
25
4Y4
4OE
4A4
3OE
– 1000-V Charged-Device Model (C101)
Package Options Include Plastic Shrink
Small-Outline (DL) and Thin Shrink
Small-Outline (DGG) Packages and 380-mil
Fine-Pitch Ceramic Flat (WD) Package
Using 25-mil Center-to-Center Spacings
description
The ’LVT16240 devices are 16-bit buffers and line drivers designed specifically for low-voltage (3.3-V) V
operation, but with the capability to provide a TTL interface to a 5-V system environment.
CC
These devices are designed specifically to improve both the performance and density of 3-state memory
address drivers, clock drivers, and bus-oriented receivers and transmitters.
The devices can be used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer. The devices provide
inverting outputs and symmetrical active-low output-enable (OE) inputs.
When V is between 0 and 1.5 V, the devices are in the high-impedance state during power up or power down.
CC
However, to ensure the high-impedance state above 1.5 V, OE should be tied to V
through a pullup resistor;
CC
the minimum value of the resistor is determined by the current-sinking capability of the driver.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Widebus is a trademark of Texas Instruments.
Copyright 2000, Texas Instruments Incorporated
UNLESS OTHERWISE NOTED this document contains PRODUCTION
DATA information current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all
parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265