Source Content uid: | SN74LVC2G07MDCKTEP | 是否无铅: | 不含铅 |
是否Rohs认证: | 符合 | 生命周期: | Active |
parentfamilyid: | 891887 | Objectid: | 1862814843 |
零件包装代码: | SOIC | 包装说明: | TSSOP, TSSOP6,.08 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
compound_id: | 952303 | 风险等级: | 0.89 |
系列: | LVC/LCX/Z | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e4 | 长度: | 2 mm |
负载电容(CL): | 50 pF | 逻辑集成电路类型: | BUFFER |
最大I(ol): | 0.032 A | 湿度敏感等级: | 1 |
功能数量: | 2 | 输入次数: | 1 |
端子数量: | 6 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 输出特性: | OPEN-DRAIN |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP6,.08 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 包装方法: | TR |
峰值回流温度(摄氏度): | 260 | 电源: | 3.3 V |
最大电源电流(ICC): | 0.01 mA | Prop。Delay @ Nom-Sup: | 5.7 ns |
传播延迟(tpd): | 5.7 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 1.1 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 1.25 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
74LVC2G07MDCKTEPG4 | TI |
完全替代 |
DUAL BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS | |
SN74LVC2G34DCKR | TI |
类似代替 |
DUAL BUFFER GATE | |
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类似代替 |
Dual Buffer with Open Drain Outputs |
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