5秒后页面跳转
SN74LVC2G06DBVRE4 PDF预览

SN74LVC2G06DBVRE4

更新时间: 2023-06-19 15:16:36
品牌 Logo 应用领域
德州仪器 - TI 光电二极管逻辑集成电路触发器栅极
页数 文件大小 规格书
12页 316K
描述
具有漏极开路输出的 2 通道、1.65V 至 5.5V 反相器 | DBV | 6 | -40 to 125

SN74LVC2G06DBVRE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:VFBGA, BGA6,2X3,20针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.47系列:LVC/LCX/Z
JESD-30 代码:R-XBGA-B6JESD-609代码:e1
长度:1.4 mm负载电容(CL):50 pF
逻辑集成电路类型:INVERTER最大I(ol):0.032 A
湿度敏感等级:1功能数量:2
输入次数:1端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN封装主体材料:UNSPECIFIED
封装代码:VFBGA封装等效代码:BGA6,2X3,20
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:3.4 ns传播延迟(tpd):7.2 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:0.9 mm
Base Number Matches:1

SN74LVC2G06DBVRE4 数据手册

 浏览型号SN74LVC2G06DBVRE4的Datasheet PDF文件第2页浏览型号SN74LVC2G06DBVRE4的Datasheet PDF文件第3页浏览型号SN74LVC2G06DBVRE4的Datasheet PDF文件第4页浏览型号SN74LVC2G06DBVRE4的Datasheet PDF文件第5页浏览型号SN74LVC2G06DBVRE4的Datasheet PDF文件第6页浏览型号SN74LVC2G06DBVRE4的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢊ  
ꢋꢌꢍ ꢄ ꢎꢁ ꢅꢏꢐ ꢑꢏ ꢐ ꢒꢌꢓ ꢓ ꢏꢐ ꢔꢋ ꢐꢎ ꢅ ꢏ ꢐ  
ꢕ ꢎꢑ ꢖ ꢗ ꢘꢏꢁ ꢙꢋꢐꢍꢎ ꢁ ꢗ ꢌꢑ ꢘ ꢌꢑꢀ  
SCES307E − AUGUST 2001 − REVISED SEPTEMBER 2003  
DBV OR DCK PACKAGE  
(TOP VIEW)  
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
D
D
D
D
D
Supports 5-V V  
Operation  
CC  
1A  
GND  
2A  
1Y  
V
2Y  
1
2
3
6
5
4
Max t of 3.4 ns at 3.3 V  
pd  
Low Power Consumption, 10-µA Max I  
CC  
CC  
24-mA Output Drive at 3.3 V  
YEA, YEP, YZA, OR YZP PACKAGE  
(BOTTOM VIEW)  
Typical V  
<0.8 V at V  
(Output Ground Bounce)  
= 3.3 V, T = 25°C  
OLP  
CC  
A
D
D
D
D
D
Typical V  
(Output V  
Undershoot)  
OHV  
OH  
3 4  
2 5  
1 6  
2A  
GND  
1A  
2Y  
>2 V at V  
= 3.3 V, T = 25°C  
CC  
A
V
CC  
Inputs and Open-Drain Outputs Accept  
Voltages up to 5.5 V  
1Y  
I
Supports Partial-Power-Down Mode  
off  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Protection Exceeds JESD 22  
− 2000-V Human-Body Model (A114-A)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
description/ordering information  
This dual inverter buffer/driver is designed for 1.65-V to 5.5-V V  
operation.  
CC  
The output of the SN74LVC2G06 device is open drain and can be connected to other open-drain outputs to  
implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
T
A
PACKAGE  
NanoStar− WCSP (DSBGA)  
0.17-mm Small Bump − YEA  
SN74LVC2G06YEAR  
SN74LVC2G06YZAR  
SN74LVC2G06YEPR  
SN74LVC2G06YZPR  
NanoFree− WCSP (DSBGA)  
0.17-mm Small Bump − YZA (Pb-free)  
−40°C to 85°C  
Tape and reel  
_ _ _CT_  
NanoStar− WCSP (DSBGA)  
0.23-mm Large Bump − YEP  
NanoFree− WCSP (DSBGA)  
0.23-mm Large Bump − YZP (Pb-free)  
SOT (SOT-23) − DBV  
SOT (SC-70) − DCK  
Tape and reel  
Tape and reel  
SN74LVC2G06DBVR  
SN74LVC2G06DCKR  
C06_  
CT_  
−40°C to 85°C  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.  
YEA/YZA, YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code,  
and one following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition  
(1 = SnPb, = Pb-free).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢑꢥ  
Copyright 2003, Texas Instruments Incorporated  
ꢡ ꢥ ꢢ ꢡꢚ ꢛꢯ ꢝꢜ ꢠ ꢨꢨ ꢦꢠ ꢞ ꢠ ꢟ ꢥ ꢡ ꢥ ꢞ ꢢ ꢪ  
ꢣꢥ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

SN74LVC2G06DBVRE4 替代型号

型号 品牌 替代类型 描述 数据表
SN74LVC2G06DBVR TI

完全替代

DUAL INVERTER BUFFER/DRIVER WITH OPEN DRAIN OUTPUTS

与SN74LVC2G06DBVRE4相关器件

型号 品牌 获取价格 描述 数据表
SN74LVC2G06DCKR TI

获取价格

DUAL INVERTER BUFFER/DRIVER WITH OPEN DRAIN OUTPUTS
SN74LVC2G06DCKRE4 TI

获取价格

具有漏极开路输出的 2 通道、1.65V 至 5.5V 反相器 | DCK | 6 | -
SN74LVC2G06DCKRG4 TI

获取价格

具有漏极开路输出的 2 通道、1.65V 至 5.5V 反相器 | DCK | 6 | -
SN74LVC2G06DCTR TI

获取价格

LVC/LCX/Z SERIES, DUAL 1-INPUT INVERT GATE, PDSO8, TSSOP-8
SN74LVC2G06DRYR TI

获取价格

具有漏极开路输出的 2 通道、1.65V 至 5.5V 反相器 | DRY | 6 | -
SN74LVC2G06DSFR TI

获取价格

Dual Inverter Buffer/Driver with Open-Drain Output 6-SON -40 to 125
SN74LVC2G06-EP TI

获取价格

DUAL INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS
SN74LVC2G06MDCKREP TI

获取价格

DUAL INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS
SN74LVC2G06-Q1 TI

获取价格

DUAL INVERTER BUFFER/DRIVER WITH OPEN DRAIN OUTPUTS
SN74LVC2G06QDBVRQ1 TI

获取价格

DUAL INVERTER BUFFER/DRIVER WITH OPEN DRAIN OUTPUTS