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SN74LVC1G10DRYR PDF预览

SN74LVC1G10DRYR

更新时间: 2024-02-24 21:41:20
品牌 Logo 应用领域
德州仪器 - TI 输入元件
页数 文件大小 规格书
11页 252K
描述
Single 3-Input Positive-NAND Gate 6-SON -40 to 125

SN74LVC1G10DRYR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SON
包装说明:VSON, SOLCC6,.04,20针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.66Is Samacsys:N
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-N6
JESD-609代码:e4长度:1.45 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.032 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TR峰值回流温度(摄氏度):260
电源:3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:5 ns传播延迟(tpd):18 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.6 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1 mm
Base Number Matches:1

SN74LVC1G10DRYR 数据手册

 浏览型号SN74LVC1G10DRYR的Datasheet PDF文件第2页浏览型号SN74LVC1G10DRYR的Datasheet PDF文件第3页浏览型号SN74LVC1G10DRYR的Datasheet PDF文件第4页浏览型号SN74LVC1G10DRYR的Datasheet PDF文件第5页浏览型号SN74LVC1G10DRYR的Datasheet PDF文件第6页浏览型号SN74LVC1G10DRYR的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢇꢉ  
ꢀꢊ ꢁꢈ ꢄ ꢋ ꢌ ꢍꢊꢁ ꢎꢏꢐ ꢎꢑ ꢀꢊ ꢐ ꢊꢅꢋ ꢍꢁꢒꢁ ꢓ ꢈ ꢒꢐꢋ  
SCES486B − SEPTEMBER 2003 − REVISED FEBRUARY 2004  
DBV OR DCK PACKAGE  
(TOP VIEW)  
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
D
D
D
D
D
D
D
D
Supports 5-V V  
Operation  
CC  
1
2
3
6
5
4
A
GND  
B
C
Inputs Accept Voltages to 5.5 V  
V
Y
CC  
Max t of 3.8 ns at 3.3 V  
pd  
Low Power Consumption, 10-µA Max I  
CC  
24-mA Output Drive at 3.3 V  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
I
Supports Partial-Power-Down Mode  
off  
Operation  
3 4  
2 5  
1 6  
B
GND  
A
Y
V
C
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
CC  
ESD Protection Exceeds JESD 22  
− 2000-V Human-Body Model (A114-A)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
description/ordering information  
The SN74LVC1G10 performs the Boolean function Y = A B C or Y = A + B + C in positive logic.  
NanoStarand NanoFreepackage technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
This device is fully specified for partial-power-down applications using I . The I circuitry disables the outputs,  
off  
off  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
T
A
PACKAGE  
NanoStar− WCSP (DSBGA)  
0.23-mm Large Bump − YEP  
SN74LVC1G10YEPR  
Tape and reel  
_ _ _C2_  
NanoFree− WCSP (DSBGA)  
0.23-mm Large Bump − YZP (Pb-free)  
SN74LVC1G10YZPR  
−40°C to 85°C  
SOT (SOT-23) − DBV  
Tape and reel  
Tape and reel  
SN74LVC1G10DBVR  
SN74LVC1G10DCKR  
C10_  
C2_  
SOT (SC-70) − DCK  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.  
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one  
following character to designate the assembly/test site. Pin  
1 identifier indicates solder-bump composition  
(1 = SnPb, = Pb-free).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢐꢠ  
Copyright 2004, Texas Instruments Incorporated  
ꢜ ꢠ ꢝ ꢜꢕ ꢖꢪ ꢘꢗ ꢛ ꢣꢣ ꢡꢛ ꢙ ꢛ ꢚ ꢠ ꢜ ꢠ ꢙ ꢝ ꢥ  
ꢞꢠ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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