5秒后页面跳转
SN74LVC1G10 PDF预览

SN74LVC1G10

更新时间: 2024-02-28 04:27:17
品牌 Logo 应用领域
德州仪器 - TI 输入元件
页数 文件大小 规格书
11页 252K
描述
SINGLE 3 INPUT POSITIVE NAND GATE

SN74LVC1G10 数据手册

 浏览型号SN74LVC1G10的Datasheet PDF文件第2页浏览型号SN74LVC1G10的Datasheet PDF文件第3页浏览型号SN74LVC1G10的Datasheet PDF文件第4页浏览型号SN74LVC1G10的Datasheet PDF文件第5页浏览型号SN74LVC1G10的Datasheet PDF文件第6页浏览型号SN74LVC1G10的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢇꢉ  
ꢀꢊ ꢁꢈ ꢄ ꢋ ꢌ ꢍꢊꢁ ꢎꢏꢐ ꢎꢑ ꢀꢊ ꢐ ꢊꢅꢋ ꢍꢁꢒꢁ ꢓ ꢈ ꢒꢐꢋ  
SCES486B − SEPTEMBER 2003 − REVISED FEBRUARY 2004  
DBV OR DCK PACKAGE  
(TOP VIEW)  
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
D
D
D
D
D
D
D
D
Supports 5-V V  
Operation  
CC  
1
2
3
6
5
4
A
GND  
B
C
Inputs Accept Voltages to 5.5 V  
V
Y
CC  
Max t of 3.8 ns at 3.3 V  
pd  
Low Power Consumption, 10-µA Max I  
CC  
24-mA Output Drive at 3.3 V  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
I
Supports Partial-Power-Down Mode  
off  
Operation  
3 4  
2 5  
1 6  
B
GND  
A
Y
V
C
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
CC  
ESD Protection Exceeds JESD 22  
− 2000-V Human-Body Model (A114-A)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
description/ordering information  
The SN74LVC1G10 performs the Boolean function Y = A B C or Y = A + B + C in positive logic.  
NanoStarand NanoFreepackage technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
This device is fully specified for partial-power-down applications using I . The I circuitry disables the outputs,  
off  
off  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
T
A
PACKAGE  
NanoStar− WCSP (DSBGA)  
0.23-mm Large Bump − YEP  
SN74LVC1G10YEPR  
Tape and reel  
_ _ _C2_  
NanoFree− WCSP (DSBGA)  
0.23-mm Large Bump − YZP (Pb-free)  
SN74LVC1G10YZPR  
−40°C to 85°C  
SOT (SOT-23) − DBV  
Tape and reel  
Tape and reel  
SN74LVC1G10DBVR  
SN74LVC1G10DCKR  
C10_  
C2_  
SOT (SC-70) − DCK  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.  
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one  
following character to designate the assembly/test site. Pin  
1 identifier indicates solder-bump composition  
(1 = SnPb, = Pb-free).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢐꢠ  
Copyright 2004, Texas Instruments Incorporated  
ꢜ ꢠ ꢝ ꢜꢕ ꢖꢪ ꢘꢗ ꢛ ꢣꢣ ꢡꢛ ꢙ ꢛ ꢚ ꢠ ꢜ ꢠ ꢙ ꢝ ꢥ  
ꢞꢠ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

与SN74LVC1G10相关器件

型号 品牌 获取价格 描述 数据表
SN74LVC1G10_10 TI

获取价格

SINGLE 3-INPUT POSITIVE-NAND GATE
SN74LVC1G10DBVR TI

获取价格

SINGLE 3 INPUT POSITIVE NAND GATE
SN74LVC1G10DBVRE4 TI

获取价格

SINGLE 3-INPUT POSITIVE-NAND GATE
SN74LVC1G10DCKR TI

获取价格

SINGLE 3 INPUT POSITIVE NAND GATE
SN74LVC1G10DCKRE4 TI

获取价格

SINGLE 3-INPUT POSITIVE-NAND GATE
SN74LVC1G10DCKRG4 TI

获取价格

SINGLE 3-INPUT POSITIVE-NAND GATE
SN74LVC1G10DRYR TI

获取价格

Single 3-Input Positive-NAND Gate 6-SON -40 to 125
SN74LVC1G10DSFR TI

获取价格

单路 3 输入、1.65V 至 5.5V 与非门 | DSF | 6 | -40 to 1
SN74LVC1G10YEPR TI

获取价格

SINGLE 3 INPUT POSITIVE NAND GATE
SN74LVC1G10YZPR TI

获取价格

SINGLE 3 INPUT POSITIVE NAND GATE