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SN74LVC1G04DBVRE4 PDF预览

SN74LVC1G04DBVRE4

更新时间: 2024-11-29 23:11:03
品牌 Logo 应用领域
德州仪器 - TI 栅极触发器逻辑集成电路光电二极管PC
页数 文件大小 规格书
17页 454K
描述
SINGLE INVERTER

SN74LVC1G04DBVRE4 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP5/6,.11,37针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:5.06Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:1008756
Samacsys Pin Count:5Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (5-Pin)Samacsys Footprint Name:DBV (R-PDSO-G5)
Samacsys Released Date:2019-06-20 13:08:45Is Samacsys:N
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2.9 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.032 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:4.2 ns传播延迟(tpd):7.5 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.45 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.6 mm
Base Number Matches:1

SN74LVC1G04DBVRE4 数据手册

 浏览型号SN74LVC1G04DBVRE4的Datasheet PDF文件第2页浏览型号SN74LVC1G04DBVRE4的Datasheet PDF文件第3页浏览型号SN74LVC1G04DBVRE4的Datasheet PDF文件第4页浏览型号SN74LVC1G04DBVRE4的Datasheet PDF文件第5页浏览型号SN74LVC1G04DBVRE4的Datasheet PDF文件第6页浏览型号SN74LVC1G04DBVRE4的Datasheet PDF文件第7页 
SN74LVC1G04  
SINGLE INVERTER GATE  
www.ti.com  
SCES214SAPRIL 1999REVISED OCTOBER 2005  
FEATURES  
Available in the Texas Instruments  
NanoStar™ and NanoFree™ Packages  
Ioff Supports Partial-Power-Down Mode  
Operation  
Supports 5-V VCC Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Inputs Accept Voltages to 5.5 V  
Max tpd of 3.3 ns at 3.3 V  
ESD Protection Exceeds JESD 22  
– 2000-V Human-Body Model (A114-A)  
– 200-V Machine Model (A115-A)  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
– 1000-V Charged-Device Model (C101)  
DBV PACKAGE  
(TOP VIEW)  
DCK PACKAGE  
(TOP VIEW)  
DRL PACKAGE  
(TOP VIEW)  
NC  
A
V
Y
1
2
3
5
1
2
3
5
NC  
A
V
CC  
CC  
1
2
3
5
NC  
A
V
Y
CC  
4
GND  
Y
4
GND  
4
GND  
YEA, YEP, YZA, OR YZP PACKAGE  
(BOTTOM VIEW)  
YZV PACKAGE  
(BOTTOM VIEW)  
3
4
2
3
Y
Y
V
GND  
A
GND  
A
2
1
1
4
CC  
5
DNU  
V
CC  
DNU − Do not use  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
This single inverter gate is designed for 1.65-V to 5.5-V VCC operation.  
The SN74LVC1G04 performs the Boolean function Y = A.  
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 1999–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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