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SN74CBT3245CDWE4 PDF预览

SN74CBT3245CDWE4

更新时间: 2024-09-14 22:28:27
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器开关逻辑集成电路光电二极管
页数 文件大小 规格书
15页 410K
描述
8-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION

SN74CBT3245CDWE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:GREEN, PLASTIC, SOIC-20针数:20
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.16Is Samacsys:N
系列:CBT/FST/QS/5C/BJESD-30 代码:R-PDSO-G20
JESD-609代码:e4长度:12.825 mm
逻辑集成电路类型:BUS DRIVER湿度敏感等级:1
位数:8功能数量:1
端口数量:2端子数量:20
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP20,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:5 V传播延迟(tpd):0.24 ns
认证状态:Not Qualified座面最大高度:2.65 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5 mmBase Number Matches:1

SN74CBT3245CDWE4 数据手册

 浏览型号SN74CBT3245CDWE4的Datasheet PDF文件第2页浏览型号SN74CBT3245CDWE4的Datasheet PDF文件第3页浏览型号SN74CBT3245CDWE4的Datasheet PDF文件第4页浏览型号SN74CBT3245CDWE4的Datasheet PDF文件第5页浏览型号SN74CBT3245CDWE4的Datasheet PDF文件第6页浏览型号SN74CBT3245CDWE4的Datasheet PDF文件第7页 
ꢊ ꢋꢅꢌ ꢆ ꢍ ꢎꢆ ꢅꢏꢀ ꢀ ꢐꢌ ꢆꢄ  
SCDS131A − SEPTEMBER 2003 − REVISED OCTOBER 2003  
D
D
D
D
Undershoot Protection for Off-Isolation on  
A and B Ports Up To −2 V  
D
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
D
D
D
I
Supports Partial-Power-Down Mode  
off  
Operation  
Low ON-State Resistance (r  
)
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
on  
Characteristics (r = 3 Typical)  
on  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
(C  
= 5.5 pF Typical)  
io(OFF)  
− 1000-V Charged-Device Model (C101)  
D
D
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
D
Supports Both Digital and Analog  
Applications: USB Interface, Memory  
Interleaving, Bus Isolation, Low-Distortion  
Signal Gating  
Low Power Consumption  
(I  
= 3 µA Max)  
CC  
D
V
Operating Range From 4 V to 5.5 V  
CC  
D
Data I/Os Support 0 to 5-V Signaling Levels  
(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)  
DB, DBQ, DGV, DW, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
V
NC  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
CC  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
1
20  
19  
18  
17  
16  
15  
14  
13  
12  
2
3
4
5
6
7
8
9
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
GND  
10  
11  
NC − No internal connection  
NC − No internal connection  
description/ordering information  
The SN74CBT3245C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r ),  
on  
allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the  
SN74CBT3245C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring  
that the switch remains in the proper OFF state.  
The SN74CBT3245C is organized as an 8-bit bus switch with a single output-enable (OE) input. When OE is  
low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between  
ports. When OE is high, the bus switch is OFF, and the high-impedance state exists between the A and B ports.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢆꢤ  
Copyright 2003, Texas Instruments Incorporated  
ꢠ ꢤ ꢡ ꢠꢙ ꢚꢮ ꢜꢛ ꢟ ꢧꢧ ꢥꢟ ꢝ ꢟ ꢞ ꢤ ꢠ ꢤ ꢝ ꢡ ꢩ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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