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SN74CB3Q3245DBQR PDF预览

SN74CB3Q3245DBQR

更新时间: 2024-11-05 22:14:39
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器开关逻辑集成电路光电二极管
页数 文件大小 规格书
14页 371K
描述
8 BIT FET BUS SWITCH 2.5-V/3.3V LOW VOLTAGE HIGH BAND WIDTH BUS SWITCH

SN74CB3Q3245DBQR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QSOP
包装说明:QSOP-20针数:20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.45Is Samacsys:N
其他特性:ALSO OPERATES WITH 3.3V SUPPLY控制类型:ENABLE LOW
计数方向:BIDIRECTIONAL系列:CB3Q/3VH/3C/2B
JESD-30 代码:R-PDSO-G20JESD-609代码:e4
长度:8.65 mm逻辑集成电路类型:BUS DRIVER
湿度敏感等级:2位数:8
功能数量:1端口数量:2
端子数量:20最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:SSOP封装等效代码:SSOP20,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:2.5/3.3 V最大电源电流(ICC):0.004 mA
Prop。Delay @ Nom-Sup:0.2 ns传播延迟(tpd):0.2 ns
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
翻译:N/A宽度:3.9 mm
Base Number Matches:1

SN74CB3Q3245DBQR 数据手册

 浏览型号SN74CB3Q3245DBQR的Datasheet PDF文件第2页浏览型号SN74CB3Q3245DBQR的Datasheet PDF文件第3页浏览型号SN74CB3Q3245DBQR的Datasheet PDF文件第4页浏览型号SN74CB3Q3245DBQR的Datasheet PDF文件第5页浏览型号SN74CB3Q3245DBQR的Datasheet PDF文件第6页浏览型号SN74CB3Q3245DBQR的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢆ ꢈꢃꢉ  
ꢊ ꢋꢅꢌ ꢍ ꢎ ꢏꢍ ꢅꢐ ꢀ ꢀ ꢑꢌ ꢍꢄ ꢒ  
ꢗꢑꢋ  
SCDS124B − JULY 2003 − REVISED NOVEMBER 2003  
D
High-Bandwidth Data Path  
(Up to 500 MHz )  
D
D
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
D
Equivalent to IDTQS3VH384 Device  
Low Power Consumption  
(I  
= 1 mA Typical)  
CC  
D
5-V Tolerant I/Os with Device Powered-Up  
or Powered-Down  
D
V
Operating Range From 2.3 V to 3.6 V  
CC  
D
D
Low and Flat ON-State Resistance (r  
)
D
Data I/Os Support 0 to 5-V Signaling Levels  
(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)  
on  
Characteristics Over Operating Range  
(r = 4 Typical)  
on  
D
D
D
D
Control Inputs Can be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Rail-to-Rail Switching on Data I/O Ports  
− 0- to 5-V Switching With 3.3-V V  
− 0- to 3.3-V Switching With 2.5-V V  
CC  
CC  
I
Supports Partial-Power-Down Mode  
off  
Operation  
D
D
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
(C  
= 3.5 pF Typical)  
io(OFF)  
D
Fast Switching Frequency  
(f = 20 MHz Max)  
− 1000-V Charged-Device Model (C101)  
OE  
D
Supports Both Digital and Analog  
For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI  
application report, CBT-C, CB3T, and CB3Q  
Signal-Switch Families, literature number SCDA008.  
Applications: PCI Interface, Differential  
Signal Interface, Memory Interleaving, Bus  
Isolation, Low-Distortion Signal Gating  
DBQ, DGV, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
1
2
3
4
5
6
7
8
9
10  
20  
V
CC  
NC  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
19 OE  
18 B1  
17 B2  
16 B3  
15 B4  
14 B5  
13 B6  
12 B7  
11 B8  
1
20  
19  
18  
17  
16  
15  
14  
13  
12  
2
3
4
5
6
7
8
9
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
GND  
10  
11  
NC − No internal connection  
NC − No internal connection  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢍꢨ  
Copyright 2003, Texas Instruments Incorporated  
ꢤ ꢨ ꢥ ꢤꢝ ꢞꢱ ꢠꢟ ꢣ ꢫꢫ ꢩꢣ ꢡ ꢣ ꢢ ꢨ ꢤ ꢨ ꢡ ꢥ ꢓ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

SN74CB3Q3245DBQR 替代型号

型号 品牌 替代类型 描述 数据表
74CB3Q3245DBQRG4 TI

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74CB3Q3245DBQRE4 TI

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