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SN74CB3Q3244DWR

更新时间： 2024-11-04 22:14:39
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器开关逻辑集成电路光电二极管
页数 文件大小 规格书
17页 556K
描述
8 BIT FET BUS SWITCH 2.5V/3.3 V LOW VOLTAGE HIGH BANDWIDTH BUS SWITCH

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中文翻译

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SN74CB3Q3244DWR 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：PLASTIC, SOIC-16针数：16
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.65Is Samacsys：N
系列：CB3Q/3VH/3C/2BJESD-30 代码：R-PDSO-G16
长度：10.3 mm逻辑集成电路类型：BUS DRIVER
位数：4功能数量：2
端口数量：2端子数量：16
最高工作温度：85 °C最低工作温度：-40 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP20,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE电源：2.5/3.3 V
传播延迟（tpd）：0.2 ns认证状态：Not Qualified
座面最大高度：2.65 mm子类别：Bus Driver/Transceivers
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL宽度：7.5 mm
Base Number Matches：1

SN74CB3Q3244DWR 数据手册

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SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
D
D
D
High-Bandwidth Data Path  
(Up To 500 MHz )  
D
D
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
†
5-V-Tolerant I/Os with Device Powered Up  
or Powered Down  
Low Power Consumption  
(I  
= 0.7 mA Typical)  
CC  
Low and Flat ON-State Resistance (r  
)
D
V
Operating Range From 2.3 V to 3.6 V  
on  
CC  
Characteristics Over Operating Range  
(r = 4 Ω Typical)  
D
Data I/Os Support 0- to 5-V Signaling  
Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V,  
5 V)  
on  
D
Rail-to-Rail Switching on Data I/O Ports  
− 0- to 5-V Switching With 3.3-V V  
− 0- to 3.3-V Switching With 2.5-V V  
CC  
CC  
D
D
D
D
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
D
D
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
I
Supports Partial-Power-Down Mode  
off  
Operation  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
(C  
= 3.5 pF Typical)  
io(OFF)  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
D
Fast Switching Frequency  
(f = 20 MHz Max)  
OE  
†
For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI  
application report, CBT-C, CB3T, and CB3Q  
Signal-Switch Families, literature number SCDA008.  
− 1000-V Charged-Device Model (C101)  
D
Supports Both Digital and Analog  
Applications: Differential Signal Interface,  
Memory Interleaving, Bus Isolation,  
Low-Distortion Signal Gating  
DB, DBQ, DGV, DW, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
V
1
2
3
4
5
6
7
8
9
10  
20  
1OE  
1A1  
2B4  
1A2  
2B3  
1A3  
2B2  
1A4  
2B1  
GND  
CC  
19 2OE  
1
20  
18 1B1  
19  
18  
17  
16  
15  
14  
13  
12  
2
3
4
5
6
7
8
9
1A1  
2B4  
1A2  
2B3  
1A3  
2B2  
1A4  
2B1  
2OE  
1B1  
2A4  
1B2  
2A3  
1B3  
2A2  
1B4  
17  
16  
15  
14  
13  
12  
11  
2A4  
1B2  
2A3  
1B3  
2A2  
1B4  
2A1  
10  
11  
description/ordering information  
The SN74CB3Q3244 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage  
of the pass transistor, providing a low and flat ON-state resistance (r ). The low and flat ON-state resistance  
on  
allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The  
device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data  
bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3244 provides an optimized  
interface solution ideally suited for broadband communications, networking, and data-intensive computing  
systems.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
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Copyright 2004, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...17

中文翻译

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 		8 BIT FET BUS SWITCH 2.5V/3.3 V LOW VOLTAGE HIGH BANDWIDTH BUS SWITCH
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 		8 BIT FET BUS SWITCH 2.5-V/3.3V LOW VOLTAGE HIGH BAND WIDTH BUS SWITCH
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