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SN74CB3Q16244_15

更新时间： 2024-09-14 02:58:47
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德州仪器 - TI /
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15页 349K
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16-Bit FET Bus Switch

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SN74CB3Q16244_15 数据手册

 浏览型号SN74CB3Q16244_15的Datasheet PDF文件第2页浏览型号SN74CB3Q16244_15的Datasheet PDF文件第3页浏览型号SN74CB3Q16244_15的Datasheet PDF文件第4页浏览型号SN74CB3Q16244_15的Datasheet PDF文件第5页浏览型号SN74CB3Q16244_15的Datasheet PDF文件第6页浏览型号SN74CB3Q16244_15的Datasheet PDF文件第7页 
SN74CB3Q16244  
16-BIT FET BUS SWITCH  
2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS168–MAY 2004–REVISED MARCH 2005  
FEATURES  
DGG, DGV, OR DL PACKAGE  
(1)  
•
High-Bandwidth Data Path (up to 500 MHz  
)
(TOP VIEW)  
•
5-V Tolerant I/Os With Device Powered Up or  
Powered Down  
1
2OE  
1A1  
1A2  
GND  
1A3  
1A4  
1OE  
1B1  
1B2  
GND  
1B3  
1B4  
48  
2
47  
•
•
Low and Flat ON-State Resistance (ron)  
Characteristics Over Operating Range  
(ron = 5 Ω Typ)  
3
46  
4
45  
5
44  
Rail-to-Rail Switching on Data I/O Ports  
– 0- to 5-V Switching With 3.3-V VCC  
– 0- to 3.3-V Switching With 2.5-V VCC  
6
43  
7
V
CC  
V
CC  
42  
8
2A1  
2A2  
GND  
2A3  
2A4  
3A1  
3A2  
GND  
3A3  
3A4  
2B1  
2B2  
GND  
2B3  
2B4  
3B1  
3B2  
GND  
3B3  
3B4  
41  
•
•
Bidirectional Data Flow With Near-Zero  
Propagation Delay  
9
40  
10  
39  
11  
38  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
(Cio(OFF) = 4 pF Typ)  
12  
37  
13  
36  
14  
35  
•
•
Fast Switching Frequency (fOE = 20 MHz Max)  
15  
34  
Data and Control Inputs Provide Undershoot  
Clamp Diodes  
16  
33  
17  
32  
•
•
•
Low Power Consumption (ICC = 1 mA Typ)  
VCC Operating Range From 2.3 V to 3.6 V  
18  
31  
V
V
CC  
CC  
19  
30  
4A1  
4A2  
GND  
4A3  
4A4  
3OE  
4B1  
4B2  
GND  
4B3  
4B4  
4OE  
20  
29  
Data I/Os Support 0- to 5-V Signaling Levels  
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)  
21  
28  
22  
27  
•
•
•
•
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
23  
26  
24  
25  
Ioff Supports Partial-Power-Down Mode  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Performance Tested Per JESD 22  
– 2000-V Human-Body Model  
(A114-B, Class II)  
– 1000-V Charged-Device Model (C101)  
•
Supports Both Digital and Analog  
Applications: PCI Interface, Differential Signal  
Interface, Memory Interleaving, Bus Isolation,  
Low-Distortion Signal Gating  
(1) For additional information regarding the performance charac-  
teristics of the CB3Q family, refer to the TI application report,  
CBT-C, CB3T, and CB3Q Signal-Switch Families, literature  
number SCDA008.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2004–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...15

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