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SN74CB3Q16210DGGR PDF预览

SN74CB3Q16210DGGR

更新时间: 2024-11-04 22:14:39
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器转换器开关逻辑集成电路光电二极管
页数 文件大小 规格书
11页 194K
描述
20 BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

SN74CB3Q16210DGGR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TSSOP
包装说明:GREEN, PLASTIC, TSSOP-48针数:48
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.02Is Samacsys:N
其他特性:ALSO OPERATES AT 3.3V SUPPLY控制类型:ENABLE LOW
计数方向:BIDIRECTIONAL系列:CB3Q/3VH/3C/2B
JESD-30 代码:R-PDSO-G48JESD-609代码:e4
长度:12.5 mm逻辑集成电路类型:BUS DRIVER
湿度敏感等级:1位数:10
功能数量:2端口数量:2
端子数量:48最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.3,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:2.5/3.3 V最大电源电流(ICC):3 mA
Prop。Delay @ Nom-Sup:0.25 ns传播延迟(tpd):0.25 ns
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.2 mm子类别:Bus Driver/Transceivers
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED翻译:N/A
宽度:6.1 mmBase Number Matches:1

SN74CB3Q16210DGGR 数据手册

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ꢊ ꢋ ꢌꢅꢍꢎ ꢀ ꢏꢍ ꢎꢄ ꢐ  
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SCDS166 − MAY 2004  
DGG, DGV, OR DL PACKAGE  
(TOP VIEW)  
D
D
D
D
Member of the Texas Instruments  
WidebusFamily  
High-Bandwidth Data Path  
NC  
1A1  
1A2  
1A3  
1A4  
1A5  
1A6  
GND  
1A7  
1OE  
2OE  
1B1  
1B2  
1B3  
1B4  
1B5  
GND  
1B6  
1B7  
1B8  
1B9  
1B10  
2B1  
2B2  
2B3  
GND  
2B4  
2B5  
2B6  
1
2
3
4
5
6
7
8
9
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
(Up To 500 MHz )  
5-V Tolerant I/Os with Device Powered Up  
or Powered Down  
Low and Flat ON-State Resistance (r  
Characteristics Over Operating Range  
)
on  
(r = 5 Typical)  
on  
D
Rail-to-Rail Switching on Data I/O Ports  
− 0-V to 5-V Switching With 3.3-V V  
− 0-V to 3.3-V Switching With 2.5-V V  
CC  
CC  
1A8 10  
1A9  
11  
D
D
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
1A10 12  
2A1 13  
2A2 14  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
V
CC  
(C  
= 4 pF Typical)  
io(OFF)  
2A3  
GND  
2A4  
2A5  
2A6  
2A7  
2A8  
2A9  
2A10  
D
D
D
Fast Switching Frequency  
(f = 20 MHz Max)  
OE  
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
Low Power Consumption  
28 2B7  
27 2B8  
26 2B9  
(I  
= 1 mA Typical)  
CC  
D
V
Operating Range From 2.3 V to 3.6 V  
CC  
25  
2B10  
D
Data I/Os Support 0 V to 5 V Signaling  
Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V,  
5 V)  
NC − No internal connection  
D
D
D
D
Control Inputs Can be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
I
Supports Partial-Power-Down Mode  
off  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
− 1000-V Charged-Device Model (C101)  
D
Supports Both Digital and Analog  
Applications: PCI Interface, Differential  
Signal Interface, Memory Interleaving, Bus  
Isolation, Low-Distortion Signal Gating  
For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI  
application report, CBT-C, CB3T, and CB3Q  
Signal-Switch Families, literature number SCDA008.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments.  
ꢎꢪ  
Copyright 2004, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

SN74CB3Q16210DGGR 替代型号

型号 品牌 替代类型 描述 数据表
QS3VH16210PAG8 IDT

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2.5V / 3.3V 20-BIT 2-PORT, HIGH BANDWIDTH BUS SWITCH
74CB3Q16210DGGRE4 TI

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