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SN74BCT2827CDWE4

更新时间： 2024-10-02 05:17:39
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器存储逻辑集成电路光电二极管输出元件信息通信管理
页数 文件大小 规格书
12页 398K
描述
10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

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SN74BCT2827CDWE4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP24,.4针数：24
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.4Is Samacsys：N
其他特性：DUAL OUTPUT ENABLE; 25 OHM OUTPUT SERIES RESISTOR控制类型：ENABLE LOW
系列：BCT/FBTJESD-30 代码：R-PDSO-G24
JESD-609代码：e4长度：15.4 mm
负载电容（CL）：50 pF逻辑集成电路类型：BUS DRIVER
最大I（ol）：0.012 A湿度敏感等级：1
位数：10功能数量：1
端口数量：2端子数量：24
最高工作温度：70 °C最低工作温度：
输出特性：3-STATE WITH SERIES RESISTOR输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP24,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TUBE
峰值回流温度（摄氏度）：260电源：5 V
最大电源电流（ICC）：40 mAProp。Delay @ Nom-Sup：7.8 ns
传播延迟（tpd）：7.8 ns认证状态：Not Qualified
座面最大高度：2.65 mm子类别：Bus Driver/Transceivers
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：BICMOS温度等级：COMMERCIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：7.5 mm
Base Number Matches：1

SN74BCT2827CDWE4 数据手册

 浏览型号SN74BCT2827CDWE4的Datasheet PDF文件第2页浏览型号SN74BCT2827CDWE4的Datasheet PDF文件第3页浏览型号SN74BCT2827CDWE4的Datasheet PDF文件第4页浏览型号SN74BCT2827CDWE4的Datasheet PDF文件第5页浏览型号SN74BCT2827CDWE4的Datasheet PDF文件第6页浏览型号SN74BCT2827CDWE4的Datasheet PDF文件第7页 
SN54BCT2827C, SN74BCT2827C  
10-BIT BUS/MOS MEMORY DRIVERS  
WITH 3-STATE OUTPUTS  
SCBS007E – APRIL 1987 – REVISED NOVEMBER 1993  
SN54BCT2827C . . . JT OR W PACKAGE  
SN74BCT2827C . . . DW OR NT PACKAGE  
(TOP VIEW)  
• BiCMOS Design Substantially Reduces I  
• Output Ports Have Equivalent 25-Ω  
Resistors; No External Resistors Are  
Required  
CCZ  
OE1  
A1  
V
CC  
Y1  
1
24  
23  
• Specifically Designed to Drive MOS DRAMs  
2
A2  
A3  
A4  
3
22 Y2  
21 Y3  
20 Y4  
• 3-State Outputs Drive Bus Lines or Buffer  
4
Memory Address Registers  
5
• Flow-Through Architecture Optimizes  
6
19  
18  
17  
16  
15  
14  
13  
A5  
A6  
A7  
A8  
A9  
A10  
GND  
Y5  
Y6  
Y7  
Y8  
Y9  
Y10  
OE2  
PCB Layout  
7
• Power-Up High-Impedance State  
8
• ESD Protection Exceeds 2000 V Per  
9
MIL-STD-883C, Method 3015  
10  
11  
12  
• Package Options Include Plastic  
Small-Outline (DW) Packages, Ceramic  
Chip Carriers (FK) and Flatpacks (W), and  
Standard Plastic and Ceramic 300-mil DIPs  
(JT, NT)  
SN54BCT2827C . . . FK PACKAGE  
(TOP VIEW)  
description  
These 10-bit buffers and bus drivers are  
specifically designed to drive the capacitive input  
characteristics of MOS DRAMs. They provide  
high-performance bus interface for wide data  
paths or buses carrying parity.  
4
3
2 1 28 27 26  
5
6
7
8
9
25  
24  
23  
22  
21  
20  
19  
A3  
A4  
A5  
NC  
A6  
A7  
A8  
Y3  
Y4  
Y5  
NC  
Y6  
Y7  
Y8  
The 3-state control gate is a 2-input AND gate with  
active-low inputs so if either output-enable (OE1  
or OE2) input is high, all ten outputs are in the  
high-impedance state. The outputs are also in the  
high-impedance state during power-up and  
power-down conditions. The outputs remain in the  
high-impedance state while the device is powered  
down.  
10  
11  
12 13 14 15 16 17 18  
NC-No internal connection  
The SN54BCT2827C is characterized for opera-  
tion over the full military temperature range of  
–55°C to 125°C. The SN74BCT2827C is  
characterized for operation from 0°C to 70°C.  
FUNCTION TABLE  
INPUTS  
OUTPUT  
Y
OE1  
L
OE2  
L
A
L
L
H
Z
Z
L
L
H
X
X
H
X
X
H
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
2–1  
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...12

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SN74BCT2827CDWE4 替代型号

型号 品牌 替代类型 描述 数据表
SN74BCT2827CDWR TI

完全替代

 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS
SN74BCT2827CNT TI

完全替代

 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS
SN74BCT2827CDW TI

完全替代

 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

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