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SN74AUP1G34DCKTE4 PDF预览

SN74AUP1G34DCKTE4

更新时间: 2024-11-26 22:28:35
品牌 Logo 应用领域
德州仪器 - TI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
13页 289K
描述
LOW-POWER SINLE BUFFER GATE

SN74AUP1G34DCKTE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:GREEN, PLASTIC, SC-70, 5 PIN针数:5
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.34Is Samacsys:N
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:BUFFER
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP5/6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TR
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:18.9 ns传播延迟(tpd):18.9 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.1 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.2 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.25 mm
Base Number Matches:1

SN74AUP1G34DCKTE4 数据手册

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ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢃ  
ꢊ ꢋ ꢌꢍꢆꢋ ꢌ ꢎꢏ ꢀꢐ ꢁꢈ ꢊ ꢎ ꢑꢅꢒ ꢒ ꢎ ꢏ ꢈ ꢄꢓꢎ  
SCES603B – AUGUST 2004 – REVISED JUNE 2005  
D
D
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
Low Static-Power Consumption;  
D
D
D
D
D
D
Wide Operating V  
Range of 0.8 V to 3.6 V  
CC  
Optimized for 3.3-V Operation  
3.6-V I/O Tolerant to Support Mixed-Mode  
Signal Operation  
I
= 0.9 µA Max  
CC  
Low Dynamic-Power Consumption;  
= 4.1 pF Typ at 3.3 V  
t
= 3.8 ns Max at 3.3 V  
pd  
C
pd  
Suitable for Point-to-Point Applications  
D
Low Input Capacitance; C = 1.5 pF Typ  
i
Low Noise − Overshoot and Undershoot  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
D
<10% of V  
CC  
D
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
D
D
I
Supports Partial-Power-Down Mode  
off  
Operation  
Input Hysteresis Allows Slow Input  
Transition and Better Switching Noise  
Immunity at the Input  
D
ESD Protection Exceeds 5000 V With  
Human-Body Model  
(V  
= 250 mV Typ at 3.3 V)  
hys  
DCK PACKAGE  
(TOP VIEW)  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
DBV PACKAGE  
(TOP VIEW)  
DRL PACKAGE  
(TOP VIEW)  
Y
3
2
1
4
5
GND  
NC  
A
V
Y
1
2
3
5
1
2
3
5
NC  
A
V
Y
CC  
CC  
1
2
3
5
4
NC  
A
V
Y
CC  
A
V
DNU  
CC  
4
GND  
4
GND  
DNU – Do not use  
GND  
See mechanical drawings for dimensions.  
description/ordering information  
The AUP family is TI’s premier solution to the industry’s low-power needs in battery-powered portable  
applications. This family ensures a very low static and dynamic power consumption across the entire V range  
CC  
of 0.8 V to 3.6 V resulting in an increased battery life. This product also maintains excellent signal integrity (see  
Figures 1 and 2).  
Switching Characteristics  
at 25 MHz  
Static-Power Consumption  
Dynamic-Power Consumption  
(pF)  
100%  
3.5  
3
(µA)  
100%  
2.5  
2
80%  
60%  
80%  
Input  
Output  
1.5  
1
60%  
40%  
3.3-V  
3.3-V  
†  
Logic  
Logic  
40%  
0.5  
0
20%  
0%  
20%  
0%  
−0.5  
10  
15 20  
Time − ns  
AUP1G08 data at C = 15 pF  
0
5
25  
35 40 45  
AUP  
AUP  
30  
Single, dual, and triple gates  
L
Figure 1. AUP − The Lowest-Power Family  
Figure 2. Excellent Signal Integrity  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢓꢡ  
Copyright 2005, Texas Instruments Incorporated  
ꢝ ꢡ ꢞ ꢝꢖ ꢗꢫ ꢙꢘ ꢜ ꢤꢤ ꢢꢜ ꢚ ꢜ ꢛ ꢡ ꢝ ꢡ ꢚ ꢞ ꢦ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

SN74AUP1G34DCKTE4 替代型号

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