SN74ALVC00
QUADRUPLE 2-INPUT POSITIVE-NAND GATE
SCES115C – JULY 1997 – REVISED AUGUST 1998
D, DGV, OR PW PACKAGE
(TOP VIEW)
EPIC (Enhanced-Performance Implanted
CMOS) Submicron Process
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
1A
1B
1Y
2A
2B
V
CC
1
2
3
4
5
6
7
14
13
12
11
10
9
4B
4A
4Y
3B
3A
3Y
Latch-Up Performance Exceeds 250 mA Per
JESD 17
Package Options Include Plastic
Small-Outline (D), Thin Very Small-Outline
(DGV), and Thin Shrink Small-Outline (PW)
Packages
2Y
GND
8
description
This quadruple 2-input positive-NAND gate is designed for 1.65-V to 3.6-V V
operation.
CC
The SN74ALVC00 performs the Boolean function Y = A • B or Y = A + B in positive logic.
The SN74ALVC00 is characterized for operation from –40°C to 85°C.
FUNCTION TABLE
(each gate)
INPUTS
OUTPUT
Y
A
B
H
X
L
H
L
L
H
H
X
†
logic symbol
1
1A
1B
2A
2B
3A
3B
4A
4B
&
3
6
2
1Y
2Y
3Y
4Y
4
5
9
8
10
12
13
11
†
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
logic diagram, each gate (positive logic)
A
B
Y
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC is a trademark of Texas Instruments Incorporated.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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