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SCBS159E − JANUARY 1991 − REVISED APRIL 2005
SN54ABT827 . . . JT PACKAGE
SN74ABT827 . . . DB, DW, NT, OR PW PACKAGE
(TOP VIEW)
D
D
D
D
D
State-of-the-Art EPIC-ΙΙB BiCMOS Design
Significantly Reduces Power Dissipation
Flow-Through Architecture Optimizes PCB
Layout
1
24
23
22
21
20
19
18
17
16
15
14
13
OE1
A1
A2
A3
A4
A5
A6
A7
A8
V
CC
2
Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
OE2
3
4
Typical V
(Output Ground Bounce) < 1 V
OLP
5
at V
= 5 V, T = 25°C
CC
A
6
High-Impedance State During Power Up
and Power Down
7
8
D
High-Drive Outputs (−32-mA I , 64-mA I
)
OL
OH
9
D
Package Options Include Plastic
10
11
12
A9
A10
GND
Small-Outline (DW), Shrink Small-Outline
(DB), and Thin Shrink Small-Outline (PW)
Packages, Ceramic Chip Carriers (FK), and
Plastic (NT) and Ceramic (JT) DIPs
SN54ABT827 . . . FK PACKAGE
(TOP VIEW)
description
These 10-bit buffers or bus drivers provide a
high-performance bus interface for wide data
paths or buses carrying parity.
4
3
2
1
28 27 26
25
5
6
7
8
9
A3
A4
A5
NC
A6
Y3
Y4
Y5
NC
Y6
24
23
22
21
The 3-state control gate is a 2-input AND gate with
active-low inputs so that, if either output-enable
(OE1 or OE2) input is high, all ten outputs are in
the high-impedance state. The ’ABT827 provides
true data at the outputs.
A7 10
A8 11
20 Y7
19 Y8
When V
is between 0 and 2.1 V, the device
12 13 14 15 16 17 18
CC
is in the high-impedance state during power up
or power down. However, to ensure
the high-impedance state above 2.1 V, OE should
NC − No internal connection
be tied to V
through a pullup resistor; the
CC
minimum value of the resistor is determined by
the current-sinking capability of the driver.
The SN54ABT827 is characterized for operation over the full military temperature range of −55°C to 125°C. The
SN74ABT827 is characterized for operation from −40°C to 85°C.
FUNCTION TABLE
INPUTS
OUTPUT
Y
OE1
L
OE2
L
A
L
L
H
Z
Z
L
L
H
X
X
H
X
X
H
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC-ΙΙB is a trademark of Texas Instruments.
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Copyright 2005, Texas Instruments Incorporated
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1
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