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SN74ABT651DWE4

更新时间： 2024-11-12 05:18:03
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器触发器逻辑集成电路光电二极管输出元件信息通信管理
页数 文件大小 规格书
11页 188K
描述
OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

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SN74ABT651DWE4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：GREEN, PLASTIC, SOIC-24针数：24
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.36Is Samacsys：N
其他特性：WITH INDEPENDENT OUTPUT ENABLE FOR EACH DIRECTION控制类型：INDEPENDENT CONTROL
计数方向：BIDIRECTIONAL系列：ABT
JESD-30 代码：R-PDSO-G24JESD-609代码：e4
长度：15.4 mm负载电容（CL）：50 pF
逻辑集成电路类型：REGISTERED BUS TRANSCEIVER最大I（ol）：0.064 A
湿度敏感等级：1位数：8
功能数量：1端口数量：2
端子数量：24最高工作温度：85 °C
最低工作温度：-40 °C输出特性：3-STATE
输出极性：INVERTED封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP24,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
包装方法：TUBE峰值回流温度（摄氏度）：260
电源：5 V最大电源电流（ICC）：30 mA
Prop。Delay @ Nom-Sup：6.2 ns传播延迟（tpd）：5.6 ns
认证状态：Not Qualified座面最大高度：2.65 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：BICMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
翻译：N/A触发器类型：POSITIVE EDGE
宽度：7.5 mmBase Number Matches：1

SN74ABT651DWE4 数据手册

 浏览型号SN74ABT651DWE4的Datasheet PDF文件第2页浏览型号SN74ABT651DWE4的Datasheet PDF文件第3页浏览型号SN74ABT651DWE4的Datasheet PDF文件第4页浏览型号SN74ABT651DWE4的Datasheet PDF文件第5页浏览型号SN74ABT651DWE4的Datasheet PDF文件第6页浏览型号SN74ABT651DWE4的Datasheet PDF文件第7页 
SN54ABT651, SN74ABT651  
OCTAL BUS TRANSCEIVERS AND REGISTERS  
WITH 3-STATE OUTPUTS  
SCBS083E – JANUARY 1991 – REVISED APRIL 1998  
SN54ABT651 . . . JT PACKAGE  
SN74ABT651 . . . DB, DW, NT, OR PW PACKAGE  
(TOP VIEW)  
State-of-the-Art EPIC-ΙΙB BiCMOS Design  
Significantly Reduces Power Dissipation  
ESD Protection Exceeds 2000 V Per  
MIL-STD-883, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
CLKAB  
SAB  
OEAB  
A1  
V
CC  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
CLKBA  
SBA  
OEBA  
B1  
2
Latch-Up Performance Exceeds 500 mA Per  
JESD 17  
3
4
A2  
5
Typical V  
(Output Ground Bounce) < 1 V  
OLP  
A3  
B2  
6
at V  
= 5 V, T = 25°C  
CC  
A
A4  
B3  
7
High-Drive Outputs (–32-mA I  
,
OH  
A5  
B4  
8
64-mA I  
)
OL  
A6  
B5  
9
Multiplexed Real-Time and Stored Data  
Inverting Data Paths  
A7  
B6  
10  
11  
A8  
B7  
Package Options Include Plastic  
13 B8  
GND 12  
Small-Outline (DW), Shrink Small-Outline  
(DB), and Thin Shrink Small-Outline (PW)  
Packages, Ceramic Chip Carriers (FK), and  
Plastic (NT) and Ceramic (JT) DIPs  
SN54ABT651 . . . FK PACKAGE  
(TOP VIEW)  
description  
These devices consist of bus-transceiver circuits,  
D-type flip-flops, and control circuitry arranged for  
multiplexed transmission of data directly from the  
data bus or from the internal storage registers.  
Output-enable (OEAB and OEBA) inputs are  
provided to control the transceiver functions. The  
select-control (SAB and SBA) inputs are provided  
to select whether real-time or stored data is  
transferred. A low input level selects real-time  
data, and a high input level selects stored data.  
4
3
2 1 28 27 26  
5
6
7
8
9
25  
OEBA  
A1  
A2  
A3  
NC  
A4  
A5  
A6  
24 B1  
23 B2  
22 NC  
B3  
B4  
B5  
21  
20  
19  
10  
11  
12 13 14 15 16 17 18  
Figure  
1
illustrates the four fundamental  
bus-management functions that can be  
performed with the ’ABT651 devices.  
NC – No internal connection  
Data on the A or B bus, or both, can be stored in the internal D flip-flops by low-to-high transitions at the  
appropriate clock (CLKAB or CLKBA) inputs, regardless of the select- or enable-control pins. When SAB and  
SBA are in the real-time transfer mode, it also is possible to store data without using the internal D-type flip-flops  
by simultaneously enabling OEAB and OEBA. In this configuration, each output reinforces its input. When all  
the other data sources to the two sets of bus lines are at high impedance, each set remains at its last state.  
To ensure the high-impedance state during power up or power down, OEBA should be tied to V  
through a  
CC  
pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver  
(B to A). OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is  
determined by the current-sourcing capability of the driver (A to B).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC-ΙΙB is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
UNLESS OTHERWISE NOTED this document contains PRODUCTION  
DATA information current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all  
parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...11

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SN74ABT651DWE4 替代型号

型号 品牌 替代类型 描述 数据表
SN74ABT651DWR TI

完全替代

 OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS
SN74ALS651ANT TI

完全替代

 OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS
SN74ABT651DW TI

完全替代

 OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

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