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SN65LVDS179DRG4 PDF预览

SN65LVDS179DRG4

更新时间： 2024-11-24 05:25:03
品牌 Logo 应用领域
德州仪器 - TI 线路驱动器或接收器驱动程序和接口接口集成电路光电二极管PC
页数 文件大小 规格书
24页 532K
描述
HIGH-SPEED DIFFERENTIAL LINE DRIVERS AND RECEIVERS

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中文翻译

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SN65LVDS179DRG4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：5.27Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：2311847
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：D(R-PDSO-G)
Samacsys Released Date：2019-11-21 06:57:22Is Samacsys：N
差分输出：YES驱动器位数：1
高电平输入电流最大值：0.00002 A输入特性：DIFFERENTIAL
接口集成电路类型：LINE TRANSCEIVER接口标准：EIA-644; TIA-644
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：4.9 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
最小输出摆幅：0.247 V输出特性：DIFFERENTIAL
最大输出低电流：0.00002 A输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP14,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
电源：3.3 V认证状态：Not Qualified
最大接收延迟：4.5 ns接收器位数：1
座面最大高度：1.75 mm子类别：Line Driver or Receivers
最大压摆率：12 mA最大供电电压：3.6 V
最小供电电压：3 V标称供电电压：3.3 V
电源电压1-最大：3.6 V电源电压1-分钟：3 V
电源电压1-Nom：3.3 V表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大传输延迟：2.7 ns
宽度：3.9 mmBase Number Matches：1

SN65LVDS179DRG4 数据手册

 浏览型号SN65LVDS179DRG4的Datasheet PDF文件第2页浏览型号SN65LVDS179DRG4的Datasheet PDF文件第3页浏览型号SN65LVDS179DRG4的Datasheet PDF文件第4页浏览型号SN65LVDS179DRG4的Datasheet PDF文件第5页浏览型号SN65LVDS179DRG4的Datasheet PDF文件第6页浏览型号SN65LVDS179DRG4的Datasheet PDF文件第7页 
SN65LVDS179, SN65LVDS180  
SN65LVDS050, SN65LVDS051  
www.ti.com  
SLLS301M–APRIL 1998–REVISED JANUARY 2007  
HIGH-SPEED DIFFERENTIAL LINE DRIVERS AND RECEIVERS  
FEATURES  
SN65LVDS179D (Marked as DL179 or LVD179)  
SN65LVDS179DGK (Marked as S79)  
(TOP VIEW)  
•
Meets or Exceeds the Requirements of ANSI  
TIA/EIA-644-1995 Standard  
5
6
8
7
3
2
Y
Z
D
VCC  
R
D
A
B
Z
Y
1
2
3
4
8
7
6
5
•
•
•
•
Signaling Rates up to 400 Mbps  
Bus-Terminal ESD Exceeds 12 kV  
Operates From a Single 3.3-V Supply  
A
B
R
GND  
Low-Voltage Differential Signaling With  
Typical Output Voltages of 350 mV and a  
100-Ω Load  
SN65LVDS180D (Marked as LVDS180)  
SN65LVDS180PW (Marked as LVDS180)  
(TOP VIEW)  
•
•
Propagation Delay Times  
9
–
–
Driver: 1.7 ns Typ  
NC  
R
RE  
VCC  
VCC  
A
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
5
Y
Z
D
10  
Receiver: 3.7 ns Typ  
4
3
DE  
RE  
Power Dissipation at 200 MHz  
DE  
D
B
Z
12  
11  
–
–
Driver: 25 mW Typical  
A
B
2
R
GND  
GND  
Y
Receiver: 60 mW Typical  
NC  
8
•
•
LVTTL Input Levels Are 5-V Tolerant  
Receiver Maintains High Input Impedance  
With VCC < 1.5 V  
SN65LVDS050D (Marked as LVDS050)  
SN65LVDS050PW (Marked as LVDS050)  
(TOP VIEW)  
14  
13  
15  
1Y  
1Z  
•
Receiver Has Open-Circuit Fail Safe  
1D  
12  
9
1B  
1A  
1R  
VCC  
1D  
1Y  
1Z  
DE  
2Z  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
DE  
2D  
10  
11  
DESCRIPTION  
2Y  
2Z  
The  
SN65LVDS179,  
SN65LVDS180,  
SN65LVDS050, and SN65LVDS051 are differential  
line drivers and receivers that use low-voltage  
differential signaling (LVDS) to achieve signaling  
rates as high as 400 Mbps. The TIA/EIA-644  
standard compliant electrical interface provides a  
minimum differential output voltage magnitude of 247  
mV into a 100-Ω load and receipt of 50-mV signals  
with up to 1 V of ground potential difference between  
a transmitter and receiver.  
RE  
2R  
2
1
3
1A  
1B  
1R  
2A  
4
5
RE  
2R  
6
7
2B  
GND  
10 2Y  
2D  
2A  
2B  
9
SN65LVDS051D (Marked as LVDS051)  
SN65LVDS051PW (Marked as LVDS051)  
(TOP VIEW)  
14  
13  
15  
1Y  
1Z  
The intended application of this device and signaling  
technique is for point-to-point baseband data  
transmission over controlled impedance media of  
approximately 100-Ω characteristic impedance. The  
transmission media may be printed-circuit board  
traces, backplanes, or cables. (Note: The ultimate  
rate and distance of data transfer depends on the  
attenuation characteristics of the media, the noise  
coupling to the environment, and other application  
specific characteristics).  
1D  
1B  
1A  
1R  
VCC  
1D  
1Y  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
4
3
1DE  
1R  
2
1
1A  
1B  
1DE  
2R  
1Z  
2DE  
10  
11  
9
2Y  
2Z  
2D  
2A  
11 2Z  
12  
5
10  
9
2B  
GND  
2Y  
2D  
2DE  
2R  
6
7
2A  
2B  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 1998–2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...24

中文翻译

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SN65LVDS179DRG4 替代型号

型号 品牌 替代类型 描述 数据表
SN65LVDS179DR TI

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