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SN65518N PDF预览

SN65518N

更新时间: 2024-11-06 19:44:31
品牌 Logo 应用领域
德州仪器 - TI 驱动信息通信管理光电二极管接口集成电路
页数 文件大小 规格书
9页 134K
描述
Vacuum Fluorescent Display Drivers 40-PDIP

SN65518N 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DIP, DIP40,.6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.89
数据输入模式:SERIAL显示模式:DOT MATRIX
输入特性:STANDARD接口集成电路类型:VACUUM FLUORESCENT DISPLAY DRIVER
JESD-30 代码:R-PDIP-T40长度:52.455 mm
复用显示功能:NO功能数量:1
区段数:32端子数量:40
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:TOTEM-POLE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP40,.6封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5,60 V认证状态:Not Qualified
座面最大高度:5.08 mm子类别:Display Drivers
最大压摆率:5 mA最大供电电压:15 V
最小供电电压:4.5 V标称供电电压:12 V
电源电压1-最大:60 V电源电压1-分钟:
电源电压1-Nom:30 V表面贴装:NO
技术:BICMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mm最小 fmax:1 MHz
Base Number Matches:1

SN65518N 数据手册

 浏览型号SN65518N的Datasheet PDF文件第2页浏览型号SN65518N的Datasheet PDF文件第3页浏览型号SN65518N的Datasheet PDF文件第4页浏览型号SN65518N的Datasheet PDF文件第5页浏览型号SN65518N的Datasheet PDF文件第6页浏览型号SN65518N的Datasheet PDF文件第7页 
SN65518, SN75518  
VACUUM FLUORESCENT DISPLAY DRIVERS  
SLDS004B – MARCH 1983 – REVISED MAY 1990  
N PACKAGE  
(TOP VIEW)  
Each Device Drives 32 Lines  
60-V Output Voltage Swing Capability  
25-mA Output Source Current Capability  
High-Speed Serially Shifted Data Input  
Latches on All Driver Outputs  
V
V
CC1  
DATA IN  
Q1  
1
40  
39  
38  
37  
36  
CC2  
SERIAL OUT  
Q32  
2
3
Q31  
Q2  
4
description  
Q30  
Q3  
5
Q29  
6
35 Q4  
The SN65518 and SN75518 are monolithic  
BIDFET integrated circuits designed to drive a  
dot matrix or segmented vacuum fluorescent  
display.  
7
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
Q28  
Q5  
8
Q27  
Q6  
9
Q26  
Q7  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
Q25  
Q8  
Each device consists of a 32-bit shift register, 32  
latches, and 32 output AND gates. Serial data is  
entered into the shift register on the low-to-high  
transition of CLOCK. While LATCH ENABLE is  
high, parallel data is transferred to the output  
buffers through a 32-bit latch. Data present in the  
latch during the high-to-low transition of LATCH  
ENABLE is latched. When STROBE is low, all Q  
outputs are enabled. When STROBE is high, all Q  
outputs are low.  
Q24  
Q9  
Q23  
Q10  
Q22  
Q11  
Q21  
Q12  
Q20  
Q13  
Q19  
Q14  
Q18  
Q15  
Q17  
Q16  
STROBE  
GND  
LATCH ENABLE  
CLOCK  
Serial data output from the shift register may be  
used to cascade additional devices. This output is  
not affected by LATCH ENABLE or STROBE.  
FN PACKAGE  
(TOP VIEW)  
The SN65518 is characterized for operation from  
40°C to 85°C. The SN75518 is characterized for  
operation from 0°C to 70°C.  
6 5  
4
3
2 1 44 43 42 41 40  
Q4  
39  
Q29  
Q28  
Q27  
Q26  
Q25  
Q24  
Q23  
Q22  
Q21  
Q20  
Q19  
7
Q5  
38  
Q6  
37  
8
9
Q7  
36  
10  
11  
12  
13  
14  
15  
16  
17  
Q8  
35  
Q9  
34  
33  
Q10  
32 Q11  
31  
30  
29  
Q12  
Q13  
NC  
18 19 20 21 22 23 24 25 26 27 28  
NC – No internal connection  
BIDFET – Bipolar, double-diffused, N-channel and P-channel MOS transistors on same chip. This is a patented process.  
Copyright 1990, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
4–1  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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