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SN65220DBVTG4 PDF预览

SN65220DBVTG4

更新时间: 2024-11-05 04:31:23
品牌 Logo 应用领域
德州仪器 - TI 瞬态抑制器
页数 文件大小 规格书
10页 251K
描述
USB PORT TRANSIENT SUPPRESSORS

SN65220DBVTG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G6
针数:178Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:8 weeks风险等级:5.49
其他特性:LOW CAPACITANCE最大击穿电压:8 V
最小击穿电压:6.5 V配置:COMPLEX
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:MO-178ABJESD-30 代码:R-PDSO-G6
JESD-609代码:e4湿度敏感等级:1
最大非重复峰值反向功率耗散:60 W元件数量:2
端子数量:6最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.385 W认证状态:Not Qualified
最大重复峰值反向电压:6 V表面贴装:YES
技术:AVALANCHE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SN65220DBVTG4 数据手册

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ꢁꢇ  
ꢔ ꢉꢕ ꢓꢂ  
www.ti.com  
SLLS266F − FEBRUARY 1997 − REVISED JULY 2004  
FEATURES  
APPLICATIONS  
D
D
Design to Protect Submicron 3-V or 5-V  
Circuits from Noise Transients  
Port ESD Protection Capability Exceeds:  
− 15-kV Human Body Model  
− 2-kV Machine Model  
Available in a WCSP Chip-Scale Package  
Stand-Off Voltage . . . 6 V Min  
Low Current Leakage . . . 1 µA Max at 6 V  
Low Capacitance . . . 35 pF Typical  
D
USB 1.1 Host, Hub, or Peripheral Ports  
SN65220YZB  
(Size: 925 mm x 925 mm + 6 mm)  
(TOP VIEW)  
SN65220DBV  
(TOP VIEW)  
D
D
D
D
1
2
3
6
5
4
A
NC  
GND  
NC  
A
GND  
B
A1  
B1  
A2  
B2  
GND  
GND  
B
DESCRIPTION  
NC − No internal connection  
When read horizontally, Pin 1 is the bottom left pin.  
The SN65220 is a single transient voltage suppressor and  
the SN65240 and SN75240 are dual transient voltage  
suppressors designed to provide electrical noise transient  
protection to Universal Serial Bus (USB) 1.1 ports. Note  
that the input capacitance of the device makes it  
unsuitable for high-speed USB 2.0 applications.  
SN65240P, SN65240PW  
SN75240P, SN75240PW  
(TOP VIEW)  
1
2
3
4
8
7
6
5
GND  
C
GND  
D
A
GND  
B
Any cabled I/O can be subjected to electrical noise  
transients from various sources. These noise transients  
can cause damage to the USB transceiver and/or the USB  
ASIC if they are of sufficient magnitude and duration.  
GND  
USB ports are typically implemented in 3-V or 5-V digital  
CMOS with very limited ESD protection. The SN65220,  
SN65240, and SN75240 can significantly increase the  
port ESD protection level and reduce the risk of damage  
to the circuits of the USB port.  
CURRENT vs VOLTAGE  
7.5  
The IEC1000-4-2 ESD performance of the SN65220,  
SN65240, and SN75240 is measured at the system level.  
Therefore, system design impacts the results of these  
tests. A high compliance level may be attained with proper  
board design and layout.  
5
2.5  
0
EQUIVALENT SCHEMATIC DIAGRAM  
A or C  
−2.5  
−5  
−7.5  
−10  
GND  
−10  
−5  
0
5
10  
15  
Voltage − V  
B or D  
NOTE A: Typical current versus voltage curve was derived  
using the IEC 1.2/50-µs surge waveform.  
(One Suppressor Shown)  
NOTE All GND terminals should be connected to ground.  
:
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments  
semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢊꢌ ꢋ ꢔꢈ ꢘ ꢍꢏ ꢋꢁ ꢔ ꢎꢍꢎ ꢙꢚ ꢛꢜ ꢝ ꢞꢟ ꢠꢙꢜꢚ ꢙꢡ ꢢꢣ ꢝ ꢝ ꢤꢚꢠ ꢟꢡ ꢜꢛ ꢥꢣꢦ ꢧꢙꢢ ꢟꢠꢙ ꢜꢚ ꢨꢟ ꢠꢤꢩ ꢊꢝ ꢜꢨꢣ ꢢꢠꢡ  
ꢢ ꢜꢚ ꢛꢜꢝ ꢞ ꢠꢜ ꢡ ꢥꢤ ꢢ ꢙ ꢛꢙ ꢢ ꢟ ꢠꢙ ꢜꢚꢡ ꢥ ꢤꢝ ꢠꢪꢤ ꢠꢤ ꢝ ꢞꢡ ꢜꢛ ꢍꢤꢫ ꢟꢡ ꢏꢚꢡ ꢠꢝ ꢣꢞ ꢤꢚꢠ ꢡ ꢡꢠ ꢟꢚꢨ ꢟꢝ ꢨ ꢬ ꢟꢝ ꢝ ꢟ ꢚꢠꢭꢩ  
ꢊꢝ ꢜ ꢨꢣꢢ ꢠ ꢙꢜ ꢚ ꢥꢝ ꢜ ꢢ ꢤ ꢡ ꢡ ꢙꢚ ꢮ ꢨꢜ ꢤ ꢡ ꢚꢜꢠ ꢚꢤ ꢢꢤ ꢡꢡ ꢟꢝ ꢙꢧ ꢭ ꢙꢚꢢ ꢧꢣꢨ ꢤ ꢠꢤ ꢡꢠꢙ ꢚꢮ ꢜꢛ ꢟꢧ ꢧ ꢥꢟ ꢝ ꢟꢞ ꢤꢠꢤ ꢝ ꢡꢩ  
Copyright 1997 − 2003, Texas Instruments Incorporated  

SN65220DBVTG4 替代型号

型号 品牌 替代类型 描述 数据表
SN65220DBVRG4 TI

完全替代

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SN65220DBVT TI

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60W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, PLASTIC, SO-8