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SN64BCT306 PDF预览

SN64BCT306

更新时间: 2024-10-14 03:31:31
品牌 Logo 应用领域
德州仪器 - TI 驱动器输出元件
页数 文件大小 规格书
6页 91K
描述
DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

SN64BCT306 数据手册

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SN64BCT306  
DUAL BUFFER/DRIVER  
WITH 3-STATE OUTPUTS  
SCBS048B – MARCH 1990 – REVISED NOVEMBER 1993  
D OR P PACKAGE  
(TOP VIEW)  
State-of-the-Art BiCMOS Design  
Significantly Reduces I  
CCZ  
ESD Protection Exceeds 2000 V Per  
MIL-STD-883C, Method 3015; Exceeds  
200 V Using Machine Model (C = 200 pF,  
R = 0)  
1
2
3
4
8
7
6
5
1OE  
2Y  
1A  
GND  
1Y  
V
CC  
2OE  
2A  
High-Impedance State During Power Up  
and Power Down  
3-State True Outputs Drive Bus Lines or  
Buffer-Memory Address Registers  
P-N-P Inputs Reduce DC Loading  
Package Options Include Plastic  
Small-Outline (D) Packages and Standard  
Plastic 300-mil DIPs (P)  
description  
This dual buffer and line driver is designed specifically to improve both the performance and density of 3-state  
memory address drivers, clock drivers, and bus-oriented receivers and transmitters.  
The SN64BCT306 is characterized for operation from 40°C to 85°C and 0°C to 70°C.  
FUNCTION TABLE  
(each buffer)  
INPUTS  
OUTPUT  
Y
OE  
A
X
L
H
L
L
Z
L
H
H
logic symbol  
logic diagram (positive logic)  
1
1
1OE  
EN  
EN  
1OE  
7
5
8
1A  
1Y  
2Y  
7
5
1
1
1A  
1Y  
2Y  
3
2OE  
3
4
2OE  
2A  
4
8
2A  
This symbol is in accordance with ANSI/IEEE Std 91-1984  
and IEC Publication 617-12.  
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
3–1  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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