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SN54LVC541 PDF预览

SN54LVC541

更新时间： 2024-11-25 23:03:07
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德州仪器 - TI 驱动器输出元件
页数 文件大小 规格书
9页 126K
描述
OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

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SN54LVC541 数据手册

 浏览型号SN54LVC541的Datasheet PDF文件第2页浏览型号SN54LVC541的Datasheet PDF文件第3页浏览型号SN54LVC541的Datasheet PDF文件第4页浏览型号SN54LVC541的Datasheet PDF文件第5页浏览型号SN54LVC541的Datasheet PDF文件第6页浏览型号SN54LVC541的Datasheet PDF文件第7页 
SN54LVC541A, SN74LVC541A  
OCTAL BUFFERS/DRIVERS  
WITH 3-STATE OUTPUTS  
SCAS298H – JANUARY 1993 – REVISED JUNE 1998  
SN54LVC541A . . . J OR W PACKAGE  
SN74LVC541A . . . DB, DW, OR PW PACKAGE  
(TOP VIEW)  
EPIC (Enhanced-Performance Implanted  
CMOS) Submicron Process  
Typical V  
< 0.8 V at V  
(Output Ground Bounce)  
OLP  
= 3.3 V, T = 25°C  
CC  
A
OE1  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
V
CC  
OE2  
1
2
3
4
5
6
7
8
9
20  
19  
18  
17  
16  
15  
14  
Typical V  
> 2 V at V  
(Output V  
Undershoot)  
OHV  
CC  
OH  
= 3.3 V, T = 25°C  
Y1  
Y2  
Y3  
Y4  
A
Power Off Disables Outputs, Permitting  
Live Insertion  
Supports Mixed-Mode Signal Operation on  
All Ports (5-V Input/Output Voltage With  
Y5  
13 Y6  
12 Y7  
11 Y8  
3.3-V V  
)
CC  
ESD Protection Exceeds 2000 V Per  
MIL-STD-883, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
GND 10  
SN54LVC541A . . . FK PACKAGE  
(TOP VIEW)  
Latch-Up Performance Exceeds 250 mA Per  
JESD 17  
Package Options Include Plastic  
Small-Outline (DW), Shrink Small-Outline  
(DB), Thin Shrink Small-Outline (PW), and  
Ceramic Flat (W) Packages, Ceramic Chip  
Carriers (FK), and DIPs (J)  
3
2
1 20 19  
18  
Y1  
Y2  
Y3  
Y4  
Y5  
A3  
A4  
A5  
A6  
A7  
4
5
6
7
8
17  
16  
15  
14  
description  
9 10 11 12 13  
TheSN54LVC541Aoctalbuffer/driverisdesigned  
for 2.7-V to 3.6-V V operation and the  
CC  
SN74LVC541A octal buffer/driver is designed for  
1.65-V to 3.6-V V operation.  
CC  
The ’LVC541A devices are ideal for driving bus  
lines or buffering memory address registers.  
These devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board  
layout.  
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output enable (OE1 or OE2)  
input is high, all eight outputs are in the high-impedance state.  
To ensure the high-impedance state during power up or power down, OE should be tied to V through a pullup  
CC  
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.  
Inputs can be driven from either 3.3-V or 5-V devices. This feature allows the use of these devices as translators  
in a mixed 3.3-V/5-V system environment.  
The SN54LVC541A is characterized for operation over the full military temperature range of –55°C to 125°C.  
The SN74LVC541A is characterized for operation from –40°C to 85°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...9

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