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SN54CBTD3384JT PDF预览

SN54CBTD3384JT

更新时间： 2024-11-15 22:16:15
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器开关逻辑集成电路
页数 文件大小 规格书
6页 93K
描述
10-BIT FET BUS SWITCHES WITH LEVEL SHIFTING

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SN54CBTD3384JT 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP, DIP24,.3
针数：24Reach Compliance Code：not_compliant
ECCN代码：3A001.A.2.CHTS代码：8542.39.00.01
风险等级：5.78Is Samacsys：N
其他特性：TTL COMPATIBLE BUS SWITCH系列：CBT/FST/QS/5C/B
JESD-30 代码：R-GDIP-T24长度：32.005 mm
负载电容（CL）：50 pF逻辑集成电路类型：BUS DRIVER
位数：10功能数量：1
端口数量：2端子数量：24
最高工作温度：125 °C最低工作温度：-55 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装等效代码：DIP24,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V传播延迟（tpd）：0.25 ns
认证状态：Not Qualified座面最大高度：5.08 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：MILITARY端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：7.62 mm
Base Number Matches：1

SN54CBTD3384JT 数据手册

 浏览型号SN54CBTD3384JT的Datasheet PDF文件第2页浏览型号SN54CBTD3384JT的Datasheet PDF文件第3页浏览型号SN54CBTD3384JT的Datasheet PDF文件第4页浏览型号SN54CBTD3384JT的Datasheet PDF文件第5页浏览型号SN54CBTD3384JT的Datasheet PDF文件第6页 
SN54CBTD3384, SN74CBTD3384  
10-BIT FET BUS SWITCHES  
WITH LEVEL SHIFTING  
SCDS025K – MAY 1995 – REVISED NOVEMBER 1998  
SN54CBTD3384 . . . JT OR W PACKAGE  
SN74CBTD3384 . . . DB, DBQ, DGV, DW, OR PW PACKAGE  
(TOP VIEW)  
5-Ω Switch Connection Between Two Ports  
TTL-Compatible Input Levels  
Designed to Be Used in Level-Shifting  
Applications  
1OE  
1B1  
1A1  
1A2  
1B2  
1B3  
1A3  
1A4  
1B4  
V
CC  
1
2
3
4
5
6
7
8
9
24  
23  
22  
21  
20  
19  
18  
17  
16  
2B5  
2A5  
2A4  
2B4  
2B3  
2A3  
2A2  
2B2  
Package Options Include Plastic  
Small-Outline (DW), Shrink Small-Outline  
(DB, DBQ), Thin Very Small-Outline (DGV),  
and Thin Shrink Small-Outline (PW)  
Packages, Ceramic Flat (W) Package,  
Ceramic DIPs (JT), and Ceramic Chip  
Carriers (FK)  
1B5 10  
15 2B1  
description  
1A5  
GND  
2A1  
11  
12  
14  
13  
The ’CBTD3384 devices provide ten bits of  
high-speed TTL-compatible bus switching. The  
low on-state resistance of the switches allows  
connections to be made without adding  
2OE  
SN54CBTD3384 . . . FK PACKAGE  
(TOP VIEW)  
propagation delay. A diode to V is integrated on  
CC  
the die to allow for level shifting between 5-V  
inputs and 3.3-V outputs.  
4
3
2 1  
28 27 26  
These devices are organized as two 5-bit  
switches with separate output-enable (OE)  
inputs. When OE is low, the switch is on and portA  
is connected to port B. When OE is high, the  
switch is open and a high-impedance state exists  
between the two ports.  
5
6
7
8
9
25  
24  
23  
22  
21  
20  
19  
1A2  
1B2  
1B3  
NC  
2A4  
2B4  
2B3  
NC  
1A3  
1A4  
1B4  
2A3  
2A2  
2B2  
10  
11  
The SN54CBTD3384 is characterized for  
operation over the full military temperature range  
from –55°C to 125°C. The SN74CBTD3384 is  
characterized for operation from –40°C to 85°C.  
12 13 14 15 16 17 18  
NC – No internal connection  
FUNCTION TABLE  
(each 5-bit bus switch)  
INPUTS INPUTS/OUTPUTS  
1OE  
2OE  
L
1B1–1B5  
1A1–1A5  
1A1–1A5  
Z
2B1–2B5  
2A1–2A5  
Z
L
L
H
H
H
L
2A1–2A5  
Z
H
Z
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
123456

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