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SN54ABT244FK PDF预览

SN54ABT244FK

更新时间： 2024-11-14 23:06:07
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器逻辑集成电路输出元件信息通信管理
页数 文件大小 规格书
17页 544K
描述
OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

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中文翻译

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SN54ABT244FK 技术参数

生命周期：Obsolete零件包装代码：QFN
包装说明：CERAMIC, CC-20针数：20
Reach Compliance Code：unknown风险等级：5.29
Is Samacsys：N其他特性：TYP VOLP < 1V @ VCC = 5V, TA = 25 DEG C
系列：ABTJESD-30 代码：S-CQCC-N20
长度：8.89 mm负载电容（CL）：50 pF
逻辑集成电路类型：BUS DRIVER位数：4
功能数量：2端口数量：2
端子数量：20最高工作温度：125 °C
最低工作温度：-55 °C输出特性：3-STATE
输出极性：TRUE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：QCCN封装形状：SQUARE
封装形式：CHIP CARRIER最大电源电流（ICC）：30 mA
传播延迟（tpd）：5 ns认证状态：Not Qualified
座面最大高度：2.03 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：BICMOS
温度等级：MILITARY端子形式：NO LEAD
端子节距：1.27 mm端子位置：QUAD
宽度：8.89 mmBase Number Matches：1

SN54ABT244FK 数据手册

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SCBS099J − JANUARY 1991 − REVISED APRIL 2005  
SN54ABT244 . . . J OR W PACKAGE  
SN74ABT244A . . . DB, DW, N, OR PW PACKAGE  
(TOP VIEW)  
D
D
D
State-of-the-Art EPIC-ΙΙBBiCMOS Design  
Significantly Reduces Power Dissipation  
Latch-Up Performance Exceeds 500 mA Per  
JEDEC Standard JESD-17  
1OE  
1A1  
2Y4  
1A2  
2Y3  
1A3  
2Y2  
1A4  
2Y1  
GND  
V
CC  
1
2
3
4
5
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7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
ESD Protection Exceeds 2000 V Per  
MIL-STD-883, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
2OE  
1Y1  
2A4  
1Y2  
2A3  
1Y3  
D
Typical V  
(Output Ground Bounce) < 1 V  
OLP  
at V  
= 5 V, T = 25°C  
CC  
A
D
High-Drive Outputs (−32-mA I , 64-mA I  
)
OL  
OH  
13 2A2  
12 1Y4  
D
Package Options Include Plastic  
Small-Outline (DW), Shrink Small-Outline  
(DB), and Thin Shrink Small-Outline (PW)  
Packages, Ceramic Chip Carriers (FK),  
Plastic (N) and Ceramic (J) DIPs, and  
Ceramic Flat (W) Package  
11  
2A1  
SN54ABT244 . . . FK PACKAGE  
(TOP VIEW)  
description  
These octal buffers and line drivers are designed  
specifically to improve both the performance and  
density of 3-state memory address drivers, clock  
drivers, and bus-oriented receivers and  
transmitters. Together with the SN54ABT240,  
3
2
1
20 19  
18  
1Y1  
2A4  
1Y2  
2A3  
1Y3  
1A2  
2Y3  
1A3  
2Y2  
1A4  
4
5
6
7
8
17  
16  
15  
14  
SN74ABT240A,  
SN54ABT241,  
and  
9 10 11 12 13  
SN74ABT241A, these devices provide the choice  
of selected combinations of inverting and  
noninverting outputs, symmetrical active-low  
output-enable (OE) inputs, and complementary  
OE and OE inputs.  
The SN54ABT244 and SN74ABT244A are organized as two 4-bit buffers/line drivers with separate OE inputs.  
When OE is low, the devices pass noninverted data from the A inputs to the Y outputs. When OE is high, the  
outputs are in the high-impedance state.  
To ensure the high-impedance state during power up or power down, OE should be tied to V  
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.  
through a pullup  
CC  
The SN54ABT244 is characterized for operation over the full military temperature range of −55°C to 125°C. The  
SN74ABT244A is characterized for operation from −40°C to 85°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC-ΙΙB is a trademark of Texas Instruments.  
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Copyright 2005, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...17

中文翻译

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