是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | R-PDSO-G2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.60 |
风险等级: | 5.8 | Is Samacsys: | N |
最小击穿电压: | 12 V | 配置: | SINGLE |
二极管电容容差: | 10.14% | 最小二极管电容比: | 1.5 |
标称二极管电容: | 69 pF | 二极管元件材料: | SILICON |
二极管类型: | VARIABLE CAPACITANCE DIODE | 频带: | S BAND |
JESD-30 代码: | R-PDSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 最大功率耗散: | 0.25 W |
认证状态: | Not Qualified | 最小质量因数: | 150 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 变容二极管分类: | HYPERABRUPT |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BB833E6327 | INFINEON |
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