SMUN5111DW1T1G

更新时间： 2024-09-16 12:33:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	123K
描述
Dual PNP Bias Resistor Transistors

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中文翻译

获取价格

数据手册

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SMUN5111DW1T1G 数据手册

MUN5111DW1,

NSBA114EDXV6,

NSBA114EDP6

Dual PNP Bias Resistor

Transistors

R1 = 10 kW, R2 = 10 kW

http://onsemi.com

PIN CONNECTIONS

(2)

PNP Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(4)

(5)

(6)

Features

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SOT−363

CASE 419B

0A M G

• Reduces Component Count

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

SOT−563

CASE 463A

(T = 25°C, common for Q1 and Q2, unless otherwise noted)

0A M G

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

CBO

CEO

Vdc

SOT−963

CASE 527AD

M G

100

mAdc

Vdc

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

0A/F

Specific Device Code

Date Code*

Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5111DW1T1G,

SMUN5111DW1T1G

SOT−363

3,000 / Tape & Reel

NSBA114EDXV6T1G

NSBA114EDP6T5G

SOT−563

SOT−963

4,000 / Tape & Reel

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2012 − Rev. 0

DTA114ED/D

12 3 4 5 6 7 8

中文翻译

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与SMUN5111DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
SMUN5111T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5112DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 22 k, R2 = 22 k
SMUN5112T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 kOhm, R2 = 22 kOhm
SMUN5113DW1T1G	ONSEMI	获取价格	双 PNP 双极数字晶体管 (BRT)
SMUN5113T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
SMUN5114DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 10 k, R2 = 47 k
SMUN5114T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
SMUN5114T3G	ONSEMI	获取价格	PNP Bipolar Digital Transistor (BRT)
SMUN5115DW1T1G	ONSEMI	获取价格	10kΩ, ∞ kΩ Dual PNP Bias Resistor Transistors
SMUN5115T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = k

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