Datasheet > SMUN2230T1

SMUN2230T1

更新时间： 2024-09-16 20:10:31

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
19页	221K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN

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技术参数
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SMUN2230T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SC-59	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.46
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	3	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SMUN2230T1 数据手册

MUN2211T1, SMUN2211T1,

NSVMUN2211T1 Series

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base−emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC−59 package which is designed for low power surface

mount applications.

NPN SILICON

BIAS RESISTOR

TRANSISTORS

Features

SC−59

CASE 318D

STYLE 1

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 3

COLLECTOR

(OUTPUT)

• Moisture Sensitivity Level: 1

PIN 2

BASE

(INPUT)

• ESD Rating − Human Body Model: Class 1

− Machine Model: Class B

PIN 1

EMITTER

(GROUND)

• The SC−59 Package can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

• AEC−Q101 Qualified and PPAP Capable

MARKING DIAGRAM

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

• Pb−Free Packages are Available*

8x M G

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

8x = Device Code (Refer to page 2)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

= Date Code*

CBO

CEO

= Pb−Free Package

Vdc

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the table on

page 2 of this data sheet.

DEVICE MARKING INFORMATION

See specific marking information in the Device Marking and

Resistor Values table on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

January, 2012 − Rev. 15

MUN2211T1/D

12 3 4 5 6 7...19

中文翻译

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与SMUN2230T1相关器件

型号	品牌	获取价格	描述	数据表
SMUN2230T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 1 kOhm, R2 = 1 kOhn
SMUN2232T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
SMUN2234T1	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
SMUN2240T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
SMUN5111DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors
SMUN5111T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5112DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 22 k, R2 = 22 k
SMUN5112T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 kOhm, R2 = 22 kOhm
SMUN5113DW1T1G	ONSEMI	获取价格	双 PNP 双极数字晶体管 (BRT)
SMUN5113T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

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