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SMUN2216T1G PDF预览

SMUN2216T1G

更新时间： 2024-11-21 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
10页 128K
描述
Digital Transistors (BRT) R1 = 4.7 k, R2 =  k

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中文翻译

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SMUN2216T1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-59包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：4 weeks
风险等级：1.54其他特性：BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.338 W参考标准：AEC-Q101
子类别：BIP General Purpose Small Signals表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：0.25 VBase Number Matches：1

SMUN2216T1G 数据手册

 浏览型号SMUN2216T1G的Datasheet PDF文件第2页浏览型号SMUN2216T1G的Datasheet PDF文件第3页浏览型号SMUN2216T1G的Datasheet PDF文件第4页浏览型号SMUN2216T1G的Datasheet PDF文件第5页浏览型号SMUN2216T1G的Datasheet PDF文件第6页浏览型号SMUN2216T1G的Datasheet PDF文件第7页 
MUN2216, MMUN2216L,  
MUN5216, DTC143TE,  
DTC143TM3  
Digital Transistors (BRT)  
R1 = 4.7 kW, R2 = 8 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
• Reduces Component Count  
G
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
1
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC−70/SOT−323  
CASE 419  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
30  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
6
Vdc  
IN(rev)  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 0  
DTC143T/D  
1234567...10

中文翻译

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 		Digital Transistors (BRT) R1 = 1 kOhm, R2 = 1 kOhn
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SMUN5111T1G ONSEMI

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