Datasheet > SMUN2130T1

SMUN2130T1

更新时间： 2024-09-15 21:21:35

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
14页	215K
描述
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMUN2130T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SC-59	包装说明：	PLASTIC, CASE 318D-04, SC-59, 3 PIN
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.43
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	3	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	240
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

SMUN2130T1 数据手册

MUN2111T1 Series,

SMUN2111T1 Series

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The

Bias Resistor Transistor (BRT) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. The BRT eliminates these

individual components by integrating them into a single device. The

use of a BRT can reduce both system cost and board space. The device

is housed in the SC−59 package which is designed for low power

surface mount applications.

SC−59

CASE 318D

PLASTIC

PIN 3

COLLECTOR

(OUTPUT)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

PIN 2

BASE

(INPUT)

PIN 1

EMITTER

(GROUND)

• ESD Rating − Human Body Model: Class 1

− Machine Model: Class B

• The SC−59 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

• AEC−Q101 Qualified and PPAP Capable

MARKING DIAGRAM

6x M G

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

= Specific Device Code

= Date Code*

= Pb−Free Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note: Microdot may be in either location)

Rating

Collector − Base Voltage

Collector − Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

*Date Code orientation may vary depending

upon manufacturing location.

CBO

CEO

Vdc

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

DEVICE MARKING INFORMATION

See device marking table on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

January, 2012 − Rev. 19

MUN2111T1/D

12 3 4 5 6 7...14

中文翻译

下载PDF

SMUN2130T1 替代型号

型号	品牌	替代类型	描述	数据表
MUN2130T1G	ONSEMI	类似代替	Bias Resistor Transistors
MUN2130T1	ONSEMI	类似代替	Bias Resistor Transistor

与SMUN2130T1相关器件

型号	品牌	获取价格	描述	数据表
SMUN2211T1	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
SMUN2211T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN2211T3G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN2212T1G	ONSEMI	获取价格	NPN 双极数字晶体管 (BRT)
SMUN2212T3	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
SMUN2213T1	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
SMUN2213T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
SMUN2214T1	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
SMUN2214T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
SMUN2214T3G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

与SMUN2130T1相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

85
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN2130T1

SMUN2130T1 技术参数

SMUN2130T1 数据手册

SMUN2130T1 替代型号

与SMUN2130T1相关器件

与SMUN2130T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN2130T1

SMUN2130T1 技术参数

SMUN2130T1 数据手册

SMUN2130T1 替代型号

与SMUN2130T1相关器件

与SMUN2130T1相关文章

您还可以找

您在本页遇到什么问题？