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SMUN2130T1 PDF预览

SMUN2130T1

更新时间: 2024-11-02 21:21:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
14页 215K
描述
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN

SMUN2130T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-59包装说明:PLASTIC, CASE 318D-04, SC-59, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.43
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):3JESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SMUN2130T1 数据手册

 浏览型号SMUN2130T1的Datasheet PDF文件第2页浏览型号SMUN2130T1的Datasheet PDF文件第3页浏览型号SMUN2130T1的Datasheet PDF文件第4页浏览型号SMUN2130T1的Datasheet PDF文件第5页浏览型号SMUN2130T1的Datasheet PDF文件第6页浏览型号SMUN2130T1的Datasheet PDF文件第7页 
MUN2111T1 Series,  
SMUN2111T1 Series  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The  
Bias Resistor Transistor (BRT) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base  
resistor and a baseemitter resistor. The BRT eliminates these  
individual components by integrating them into a single device. The  
use of a BRT can reduce both system cost and board space. The device  
is housed in the SC59 package which is designed for low power  
surface mount applications.  
SC59  
CASE 318D  
PLASTIC  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
R1  
R2  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Moisture Sensitivity Level: 1  
PIN 2  
BASE  
(INPUT)  
PIN 1  
EMITTER  
(GROUND)  
ESD Rating Human Body Model: Class 1  
Machine Model: Class B  
The SC59 Package Can be Soldered Using Wave or Reflow  
The Modified GullWinged Leads Absorb Thermal Stress During  
Soldering Eliminating the Possibility of Damage to the Die  
AECQ101 Qualified and PPAP Capable  
MARKING DIAGRAM  
6x M G  
G
S Prefix for Automotive and Other Applications Requiring Unique  
1
Site and Control Change Requirements  
6x  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
PbFree Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
(Note: Microdot may be in either location)  
Rating  
Collector Base Voltage  
Collector Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
*Date Code orientation may vary depending  
upon manufacturing location.  
V
V
CBO  
CEO  
50  
Vdc  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
I
C
100  
mAdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
DEVICE MARKING INFORMATION  
See device marking table on page 5 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
Publication Order Number:  
1
January, 2012 Rev. 19  
MUN2111T1/D  

SMUN2130T1 替代型号

型号 品牌 替代类型 描述 数据表
MUN2130T1G ONSEMI

类似代替

Bias Resistor Transistors
MUN2130T1 ONSEMI

类似代替

Bias Resistor Transistor

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