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SMUN2112T3 PDF预览

SMUN2112T3

更新时间： 2024-11-02 15:51:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
38页 385K
描述
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN

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SMUN2112T3 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：SC-59包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.28Is Samacsys：N
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SMUN2112T3 数据手册

 浏览型号SMUN2112T3的Datasheet PDF文件第2页浏览型号SMUN2112T3的Datasheet PDF文件第3页浏览型号SMUN2112T3的Datasheet PDF文件第4页浏览型号SMUN2112T3的Datasheet PDF文件第5页浏览型号SMUN2112T3的Datasheet PDF文件第6页浏览型号SMUN2112T3的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base–emitter resistor. The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC–59 package which is designed  
for low power surface mount applications.  
PNP SILICON  
BIAS RESISTOR  
TRANSISTOR  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
PIN3  
COLLECTOR  
(OUTPUT)  
Reduces Component Count  
R1  
R2  
The SC–59 package can be soldered using wave or reflow.  
The modified gull–winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
PIN2  
BASE  
(INPUT)  
3
2
1
PIN1  
EMITTER  
(GROUND)  
•
Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
CASE 318D–03, STYLE 1  
(SC–59)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
Collector–Emitter Voltage  
Collector Current  
50  
Vdc  
CEO  
I
C
100  
mAdc  
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
*200  
1.6  
mW  
mW/°C  
A
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction–to–Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
625  
°C/W  
°C  
θJA  
T , T  
J
–65 to +150  
stg  
Maximum Temperature for Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MUN2111T1  
MUN2112T1  
MUN2113T1  
MUN2114T1  
MUN2115T1  
6A  
6B  
6C  
6D  
6E  
6F  
6G  
6H  
6J  
10  
22  
47  
10  
10  
10  
22  
47  
47  
∞
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
MUN2116T1  
MUN2130T1  
MUN2131T1  
MUN2132T1  
MUN2133T1  
MUN2134T1  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
∞
1.0  
2.2  
4.7  
47  
47  
6K  
6L  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 5  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–731  
1234567...38

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与SMUN2112T3相关器件

型号 品牌 获取价格 描述 数据表
SMUN2113T1 ONSEMI

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3
SMUN2113T1G ONSEMI

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 		Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
SMUN2114T1 ONSEMI

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 		暂无描述
SMUN2114T1G ONSEMI

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 		Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
SMUN2130T1 ONSEMI

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 		100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN
SMUN2211T1 ONSEMI

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 		100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
SMUN2211T1G ONSEMI

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 		Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN2211T3G ONSEMI

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 		Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN2212T1G ONSEMI

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 		NPN 双极数字晶体管 (BRT)
SMUN2212T3 ONSEMI

获取价格

 		100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN

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