Datasheet > SMU25N05-45L

SMU25N05-45L

更新时间： 2024-02-13 16:55:30

品牌	Logo	应用领域
TEMIC		开关脉冲晶体管
页数	文件大小	规格书
4页	83K
描述
Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,

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技术参数
数据手册

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SMU25N05-45L 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	Single
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SMU25N05-45L 数据手册

SMD/SMU25N05-45L

N-Channel Enhancement-Mode Transistors, Logic Level

Product Summary

V_DS(V)

r_DS(on)(W)

I_D^a(A)

0.045

TOĆ251

TOĆ252

Drain Connected to Tab

Top View

NĆChannel MOSFET

Order Number:

SMD25N05Ć45L

Top View

Order Number:

SMU25N05Ć45L

Absolute Maximum Ratings (T_A= 25_C Unless Otherwise Noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"16

5.0

3.1

100

= 25_C

= 100_C

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Repetitive Avalanche Energy (Duty Cycle v 1%)

L = 0.1 mH

= 25_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

thJA

thJC

thCS

Maximum Junction-to-Case

2.5

_C/W

Case-to-Sink

Notes:

1.0

a. Calculated Rating for T = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings

and Typical Characteristics).

b. Surface mounted on PC board or mounted vertically in free air.

Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document

#1411.

Siliconix

P-37394—Rev. E, 20-Jun-94

12 3 4

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