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SMTY18AM PDF预览

SMTY18AM

更新时间: 2024-11-05 09:18:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
6页 56K
描述
LOW FORWARD VOLTAGE TVS: Transky

SMTY18AM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-216AA
包装说明:STMITE PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Is Samacsys:N外壳连接:CATHODE
最大钳位电压:20 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-216AAJESD-30 代码:S-PSSO-G1
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:1最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:16 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMTY18AM 数据手册

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SMTY18AM  
®
LOW FORWARD VOLTAGE TVS: Transky™  
FEATURES AND BENEFITS  
High peak pulse power: 400W (8/20µs)  
Stand-off voltage 16V  
Low forward voltage: 0.48V @ 0.85A @ 25°C  
Low clamping factor VCL/VBR  
A
K
Fast response time  
Very thin package (1.0mm overall component  
height)  
STmite  
(DO-216AA)  
DESCRIPTION  
The Transky™ is designed specifically for portable  
equipments and miniaturized electronics devices  
subject to ESD transient overvoltages.  
The Transky™ combines the performance of a  
Transil™ or TVS (Tansient Voltage Supressor)  
and low forward voltage Schottky diode in a  
monolithic structure.  
Table 1: Order Code  
Part Number  
Marking  
SMTY18AM  
Y18  
K
COMPLIES WITH FOLLOWING STANDARDS  
IEC 61000-4-2 Level 4:  
15kV (Air discharge)  
8kV (Contact discharge)  
MIL Standard 883E-Method 3015-7: class 3C  
Human Body Model (HBM)  
A
Table 2: Absolute Ratings (limiting values)  
Symbol  
Parameter  
Value  
Unit  
VPP  
IEC 61000-4-2 standard  
15  
8
kV  
Air discharge  
Contact discharge  
PPP  
400  
25  
W
A
Peak pulse power dissipation (see note 1)  
Non repetitive surge peak forward current  
Tj initial = Tamb  
IFSM  
Tp = 10 ms  
Tj = initial = Tamb  
Tstg  
Tj  
-65 to + 175  
150  
°C  
°C  
Storage temperature range  
Maximum operating junction temperature  
Note 1: 8/20µs pulse waveform  
September 2004  
REV. 2  
1/6  

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