5秒后页面跳转
SMTOAK2-070C PDF预览

SMTOAK2-070C

更新时间: 2024-11-06 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 电子开关瞬态抑制二极管
页数 文件大小 规格书
4页 511K
描述
SMTOAK2瞬态抑制二极管系列采用带引线改装型SMTO-263封装。 它旨在保护敏感电子设备免受浪涌事件和电感性负载开关电压瞬态事件的影响。 特征和优势: 应用: 旨在保护敏感电子设备免受下列损害: 基站保护和工业保护

SMTOAK2-070C 数据手册

 浏览型号SMTOAK2-070C的Datasheet PDF文件第2页浏览型号SMTOAK2-070C的Datasheet PDF文件第3页浏览型号SMTOAK2-070C的Datasheet PDF文件第4页 
TVS Diode Datasheet  
SMTOAK2 Series  
Surface Mount – SMTO-263-2 kA  
RoHS Pb e3  
Description  
The SMTOAK2TVS Diode Series is housed in a modified  
SMTO-263 package , achieving a compact mechanical  
design and compatible with automated PCB assembly. The  
SMTOAK2 series is designed to protect sensitive electronics  
against surge events and inductive load switching voltage  
transient events.  
Features & Benefits  
SMTO-263 package, footprint  
compatible with industry  
popular DO- 218AB package  
UL Recognized compound  
meeting flammability rating  
UL94 V-0  
Ideal for automated PCB  
assembly process, reducing  
manufacturing costs and  
improving soldering quality,  
as compared to axial leaded  
packages  
VBR @TJ= VBR@25 °C  
x (1+αT x (TJ - 25))  
(αT:Temperature Coefficient,  
typical value is 0.1%  
Additional Information  
Glass passivated chip junction  
in modifiedTO- 263 package  
Matte tin lead–free plated  
ESD protection of data lines  
in accordance with IEC  
61000-4-2, 30 kV(Air), 30 kV  
(Contact)  
Halogen free and RoHS  
compliant  
Pb-free E3 means 2nd level  
interconnect is Pb-free and  
the terminal finish material is  
tin (Sn) (IPC/JEDEC J-STD-  
609A.01)  
Fast response time: typically  
less than 1.0 ps from 0 Volts  
to VBR min  
Resources  
Accessories  
Samples  
Excellent clamping capability  
Agency Approvals  
Low dynamic resistance  
enabling a low clamping  
voltage  
Agency  
Agency file number  
E230531  
Applications  
Designed to protect sensitive electronics from:  
Maximum Ratings andThermal Characteristics  
Over voltage surge transients  
Remote Radio Units (RRUs)  
and Baseband Units (BBUs)  
(TA=25 °C unless otherwise noted)  
Inductive load switching  
voltage transients  
High power DC bus in harsh  
environments  
Parameter  
Symbol  
Value  
2
Unit  
kA  
PoE ports  
Small cell  
Current Rating1  
IPP  
PD  
Steady State Power Dissipation on Infinite  
Heat Sink atTL=75 ºC  
15  
W
Operating Junction and Storage  
Temperature Range  
TJ, TSTG  
RθJC  
-55 to 150  
1.8  
°C  
Functional Diagram  
TypicalThermal Resistance Junction to case  
°C/W  
Note:  
1. Rated IPP measured with 8/20 μs pulse.  
Bi-direcctional  
Electrical Characteristics (TA=25 °C unless otherwise noted)  
Maximum  
Clamping  
VoltageVC  
@ IPP  
Maximum  
Peak  
Pulse  
Current IPP  
(8/20 μs)  
Maximum  
Peak Pulse  
Current IPP  
(10/350 μs)  
Maximum  
Reverse  
Leakage  
IR @VR  
Maximum  
Temperature  
coefficient of  
VBR  
Stand off  
Voltage  
VSO  
Breakdown  
VoltageVBR  
(Volts) @ IT  
Test  
Current  
IT  
Part  
Number  
Part  
Marking  
(8/20 μs)  
(V)  
Min  
78.20  
Max  
(mA)  
(A)  
(V)  
(A)  
(μA)  
(%/C)  
SMTOAK2-070C SM2K70C  
70  
86.02  
5
250  
130  
2000  
2
0.074  
© 2023 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: GD. 08/11/23  

与SMTOAK2-070C相关器件

型号 品牌 获取价格 描述 数据表
SMTOAK2-076C LITTELFUSE

获取价格

SMTOAK2瞬态抑制二极管系列采用带引线改装型SMTO-263封装。 它旨在保护敏感电子
SMTPA STMICROELECTRONICS

获取价格

TRISILETM
SMTPA100 VISHAY

获取价格

Silicon Surge Protector, 125V V(BO) Max, 30A, DO-214AA, PLASTIC, SMB, 2 PIN
SMTPA100 STMICROELECTRONICS

获取价格

TRISILETM
SMTPA100 BL Galaxy Electrical

获取价格

TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
SMTPA100 FRONTIER

获取价格

TELECOM EQUIPMENT PROTECTION:TRISILTM
SMTPA120 BL Galaxy Electrical

获取价格

TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
SMTPA120 STMICROELECTRONICS

获取价格

TRISILETM
SMTPA120 VISHAY

获取价格

Silicon Surge Protector, 145V V(BO) Max, 30A, DO-214AA, PLASTIC, SMB, 2 PIN
SMTPA130 STMICROELECTRONICS

获取价格

TRISILETM