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SMTA5-700-52 PDF预览

SMTA5-700-52

更新时间: 2024-11-01 04:03:43
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Phase Control Thyristor

SMTA5-700-52 数据手册

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SMTA5-700  
Phase Control Thyristor  
V
,
RRM  
Type  
V
RSM  
V
DRM  
SMTA5-700-50  
SMTA5-700-52  
SMTA5-700-55  
SMTA5-700-60  
SMTA5-700-65  
5100  
5300  
5600  
6100  
6600  
5000  
5200  
5500  
6000  
6500  
Symbol  
Unit  
Value  
Test Conditions  
Parameter  
O
average on-state current  
A
I
T =100 C  
C
700  
TAVM  
maximum RMS  
on-state current  
I
A
1650  
T =T  
VJ  
TRMS  
VJM  
O
10  
11  
T =25 C; t =10ms  
P
C
surge-current  
I
TSM  
kA  
T =T ; t =10ms  
P
VJ  
VJM  
O
T =25 C; t =10ms  
P
500  
605  
C
2
2
2
kA ·s  
i t-value  
i t  
T =T ; t =10ms  
P
VJ  
VJM  
T =T ; V =0.67·V ;  
DRM  
VJ  
VJM  
D
critical rate of rise  
of on-state current  
f=50 Hz; i =3A;  
GM  
(di/dt)  
A/µs  
cr  
250  
di /dt=6A/µs  
G
T =T ; V =0.67·V ;  
DRM  
critical rate of rise  
of off-state volvage  
VJ  
VJM  
D
V/µs  
mA  
V
1000  
(dv/dt)  
cr  
gate open  
T =T ; V =V ; V =V  
DRM  
200  
I /I  
RRM DRM  
off-state Leakage current  
VJ  
VJM  
R
RRM  
D
reverse repeat  
5000-6500  
V
RRM  
O
Peak value voltage  
T =T ; 180 C sine wave,  
VJM  
VJ  
50 Hz; gate open  
off state repeat  
5000-6500  
V
V
DRM  
Peak value voltage  
non-repetitive  
V
V
RSM  
T =T  
VJM  
5100-6600  
VJ  
peak reverse voltage  
T =T ; I =1000A  
TM  
2.19  
0.97  
2.5  
V
on-state voltage  
slope resistance  
gate trigger voltage  
V
VJ  
VJM  
TM  
mW  
r
T =T  
VJ  
T
VJM  
O
V
T =25 C; V =12V  
D
V
VJ  
GT  
O
I
T =25 C; V =12V  
D
mA  
250  
0.4  
gate trigger current  
GT  
VJ  
V
gate non-trigger voltage  
gate non-trigger current  
V
T =T ;V =0.67·V  
DRM  
GD  
VJ  
VJM  
D
T =T ;V =0.67·V  
DRM  
10  
I
mA  
mA  
VJ  
VJM  
D
GD  
O
350  
I
T =25 C; V =12V; gate open  
VJ D  
holding current  
H
O
T =25 C; V =12V;  
D
VJ  
I
L
t =20µs;i =3A;  
G GM  
latching current  
400  
mA  
di /dt=6A/µs  
G
SEMPO Electronic Limited  
www.sempoel.com  

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