Datasheet > SMTA5-300-60

SMTA5-300-60

更新时间： 2024-01-04 19:58:04

品牌	Logo	应用领域
SEMPO		/
页数	文件大小	规格书
5页	280K
描述
Phase Control Thyristor

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中文翻译

获取价格

数据手册

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SMTA5-300-60 数据手册

SMTA5-300

Phase Control Thyristor

RRM

Type

RSM

DRM

SMTA5-300-50

SMTA5-300-52

SMTA5-300-55

SMTA5-300-60

SMTA5-300-65

5100

5300

5600

6100

6600

5000

5200

5500

6000

6500

Symbol

Unit

Value

Test Conditions

Parameter

average on-state current

T =100 C

300

TAVM

maximum RMS

on-state current

520

T =T

TRMS

VJM

4.8

4.3

T =25 C; t =10ms

surge-current

TSM

T =T ; t =10ms

VJM

T =25 C; t =10ms

115

92.5

kA ·s

i t-value

i t

T =T ; t =10ms

VJM

T =T ; V =0.67·V ;

DRM

VJM

critical rate of rise

of on-state current

f=50 Hz; i =3A;

(di/dt)

A/µs

250

di /dt=6A/µs

T =T ; V =0.67·V ;

DRM

critical rate of rise

of off-state volvage

VJM

V/µs

1000

(dv/dt)

gate open

T =T ; V =V ; V =V

DRM

100

I /I

RRM DRM

off-state Leakage current

VJM

RRM

reverse repeat

5000-6500

RRM

Peak value voltage

T =T ; 180 C sine wave,

VJM

50 Hz; gate open

off state repeat

5000-6500

DRM

Peak value voltage

non-repetitive

T =T

VJM

5100-6600

2.35

2.3

RSM

peak reverse voltage

T =T ; I =800A

on-state voltage

slope resistance

gate trigger voltage

VJM

T =T

VJM

2.5

T =25 C; V =12V

350

0.4

gate trigger current

gate non-trigger voltage

gate non-trigger current

T =T ;V =0.67·V

DRM

VJM

T =T ;V =0.67·V

DRM

VJM

350

T =25 C; V =12V; gate open

VJ D

holding current

T =25 C; V =12V;

t =20µs;i =3A;

G GM

latching current

450

di /dt=6A/µs

SEMPO Electronic Limited

www.sempoel.com

12 3 4 5

中文翻译

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