5秒后页面跳转
SMPJ309 PDF预览

SMPJ309

更新时间: 2024-11-06 20:03:15
品牌 Logo 应用领域
INTERFET 放大器光电二极管晶体管
页数 文件大小 规格书
1页 93K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236

SMPJ309 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.78
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):3.5 pF最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

SMPJ309 数据手册

  
01/99  
B-61  
J308, J309  
N-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Mixers  
A
Reverse Gate Source & Reverse Gate Drain Voltage  
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
– 25 V  
10 mA  
360 mW  
¥ Oscillators  
¥ VHF/UHF Amplifiers  
3.27 mW/°C  
J308  
J309  
Process NJ72  
Test Conditions  
At 25°C free air temperature:  
Static Electrical Characteristics  
Min  
Typ Max Min  
Typ Max Unit  
Gate Source Breakdown Voltage  
V
– 25  
– 25  
V
I = – 1µA, V = ØV  
G DS  
(BR)GSS  
– 1  
– 1  
– 1  
– 4  
1
nA  
µA  
V
V
= – 15V, V = ØV  
DS  
GS  
Gate Reverse Current  
I
GSS  
– 1  
V
= – 15V, V = ØV  
DS  
T = +125°C  
A
GS  
Gate Source Cutoff Voltage  
V
– 1  
12  
– 6.5 – 1  
1
V = 10V, I = 1 nA  
DS D  
GS(OFF)  
Gate Source Forward Voltage  
Drain Saturation Current (Pulsed)  
V
V
V
= ØV, I = 1 mA  
GS(F)  
DS G  
I
60  
12  
30  
mA  
V
= 10V, V = ØV  
DSS  
DS GS  
Dynamic Electrical Characteristics  
Common Source Forward Transconductance  
Common Source Output Conductance  
Common Gate Forward Transconductance  
Common Gate Output Transconductance  
Gate Drain Capacitance  
g
g
g
g
8000 17000  
10000 17000  
µS  
µS  
µS  
µS  
pF  
pF  
V
= 10V, I = 10 mA  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 MHz  
f = 1 MHz  
fs  
DS D  
250  
250  
V
= 10V, I = 10 mA  
os  
fg  
og  
DS D  
13000  
150  
1.8  
13000  
100  
1.8  
V
= 10V, I = 10 mA  
D
DS  
V
= 10V, I = 10 mA  
D
DS  
C
2.5  
5
2.5  
5
V = ØV, V = – 10V  
DS GS  
dg  
Gate Source Capacitance  
C
4
4
V
= ØV, V = – 10V  
gs  
DS GS  
Equivalent Short Circuit  
Input Noise Voltage  
nV/Hz  
e¯  
10  
12  
10  
12  
V
= 10V, I = 10 mA  
f = 100 kHz  
f = 105 MHz  
N
DS D  
Common Source Forward  
Transconductance  
Re  
µS  
V
= 10V, I = 10 mA  
(Yfs)  
DS D  
Common Gate Input Conductance  
Common Source Input Conductance  
Re  
Re  
14  
0.4  
0.15  
16  
14  
0.4  
0.15  
16  
µS  
µS  
µS  
dB  
dB  
dB  
dB  
V
= 10V, I = 10 mA  
f = 105 MHz  
f = 105 MHz  
f = 105 MHz  
f = 105 MHz  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
(Yig)  
(Yis)  
(Gos)  
DS D  
V
= 10V, I = 10 mA  
D
DS  
Common Source Output Conductance Re  
V
= 10V, I = 10 mA  
D
DS  
V
= 10V, I = 10 mA  
D
Common Gate Power Gain  
G
DS  
pg  
at Noise Match  
11  
11  
V
= 10V, I = 10 mA  
D
DS  
1.5  
2.7  
1.5  
2.7  
V
= 15V, I = 10 mA  
D
DS  
Noise Figure  
NF  
V
= 15V, I = 10 mA  
D
DS  
TOÐ226AA Package  
Dimensions in Inches (mm)  
Surface Mount  
SMPJ308, SMPJ309  
Pin Configuration  
1 Drain, 2 Source, 3 Gate  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

与SMPJ309相关器件

型号 品牌 获取价格 描述 数据表
SMPJ30A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ30CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ33A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ33CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ36A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ36CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ3N21C3A-160.00MHZ MMD

获取价格

Oscillator, 19.44MHz Min, 160MHz Max, 160MHz Nom,
SMPJ40A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ40CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ43A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR