5秒后页面跳转
SMPJ176TR PDF预览

SMPJ176TR

更新时间: 2024-11-02 19:54:19
品牌 Logo 应用领域
INTERFET 开关晶体管
页数 文件大小 规格书
1页 93K
描述
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3

SMPJ176TR 技术参数

生命周期:Contact Manufacturer包装说明:,
针数:3Reach Compliance Code:unknown
风险等级:5.72配置:SINGLE
最大漏源导通电阻:250 ΩFET 技术:JUNCTION
元件数量:1工作模式:DEPLETION MODE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SMPJ176TR 数据手册

  
01/99  
B-53  
J176, J177  
P-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Choppers  
¥ Commutators  
¥ Analog Switches  
A
Reverse Gate Source & Reverse Gate Drain Voltage  
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
– 30 V  
50 mA  
360 mW  
3.27 mW/°C  
At 25°C free air temperature:  
Static Electrical Characteristics  
J176  
J177  
Process PJ99  
Test Conditions  
I = 1 µA, V = ØV  
Min Max Min Max Unit  
Gate Source Breakdown Voltage  
Gate Reverse Current  
V
30  
30  
V
nA  
V
(BR)GSS  
G
DS  
I
1
4
1
V
= 20V, V = ØV  
GSS  
GS DS  
Gate Source Cutoff Voltage  
Drain Saturation Current (Pulsed)  
Drain Cutoff Current  
V
1
0.8 2.25  
V
= – 15V, I = – 10 nA  
GS(OFF)  
DS  
D
I
– 2 – 35 – 1.5 – 20 mA  
V
= – 15V, V = ØV  
DSS  
DS  
GS  
I
– 1  
Max  
– 1  
Max  
nA  
V
= – 15V, V = 10V  
D(OFF)  
DS  
GS  
Dynamic Electrical Characteristics  
Drain Source ON Resistance  
r
250  
300  
V
= Ø, V < = 0.1V  
f = 1 kHz  
ds(on)  
GS  
DS  
Dynamic Electrical Characteristics  
Typ  
Typ  
Drain Gate Capacitance  
C
5.5  
5.5  
32  
5.5  
5.5  
32  
pF  
pF  
pF  
V
= ØV, V = 10V  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
gd  
DS  
GS  
Source Gate Capacitance  
C
V
= ØV, V = 10V  
gs  
DS  
GS  
Drain Gate + Source Gate Capacitance  
C
+ C  
V
= V = ØV  
gd  
gs  
DS  
GS  
Switching Characteristics  
J176  
J177  
Turn ON Delay Time  
Rise Time  
td  
15  
20  
15  
20  
20  
25  
20  
25  
ns  
ns  
ns  
ns  
(on)  
V
– 6  
– 6  
V
V
V
DD  
t
r
V
R
6
3
10 k  
Ø
GS(OFF)  
Turn OFF Delay Time  
Fall Time  
td  
(off)  
5.6 k  
Ø
L
t
V
GS(ON)  
f
TOÐ226AA Package  
Dimensions in Inches (mm)  
Surface Mount  
SMPJ176, SMPJ177  
Pin Configuration  
1 Drain, 2 Gate, 3 Source  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

与SMPJ176TR相关器件

型号 品牌 获取价格 描述 数据表
SMPJ177 INTERFET

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
SMPJ17A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ17CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ18A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ18CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ19A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ19CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ20A MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ20CA MDD

获取价格

TRANSIENT VTAGE SUPPRESSOR
SMPJ210 INTERFET

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236