生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.34 | Is Samacsys: | N |
配置: | SINGLE | 最大漏源导通电阻: | 25 Ω |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 15 pF |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMPJ111 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMPJ111A | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMPJ112 | INTERFET |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMPJ112A | INTERFET |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMPJ113A | INTERFET |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMPJ11A | MDD |
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TRANSIENT VTAGE SUPPRESSOR | |
SMPJ11CA | MDD |
获取价格 |
TRANSIENT VTAGE SUPPRESSOR | |
SMPJ12A | MDD |
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TRANSIENT VTAGE SUPPRESSOR | |
SMPJ12CA | MDD |
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TRANSIENT VTAGE SUPPRESSOR | |
SMPJ13A | MDD |
获取价格 |
TRANSIENT VTAGE SUPPRESSOR |