生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | 配置: | SINGLE |
最大漏源导通电阻: | 400 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 2 pF | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
子类别: | FET General Purpose Small Signal | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMP5485 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMP5486 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | |
SMP550G-EJ | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-EK | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-EL | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-EM | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-EN | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-FJ | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-FK | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE | |
SMP550G-FL | SEME-LAB |
获取价格 |
P.I.N. PHOTODIODE |