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SMMBT2369LT1G PDF预览

SMMBT2369LT1G

更新时间: 2024-01-23 15:36:25
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 94K
描述
Switching Transistors

SMMBT2369LT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:4 weeks风险等级:5.7
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):18 ns最大开启时间(吨):12 ns
Base Number Matches:1

SMMBT2369LT1G 数据手册

 浏览型号SMMBT2369LT1G的Datasheet PDF文件第2页浏览型号SMMBT2369LT1G的Datasheet PDF文件第3页浏览型号SMMBT2369LT1G的Datasheet PDF文件第4页浏览型号SMMBT2369LT1G的Datasheet PDF文件第5页浏览型号SMMBT2369LT1G的Datasheet PDF文件第6页 
MMBT2369L, MMBT2369AL  
Switching Transistors  
NPN Silicon  
Features  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
www.onsemi.com  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOT−23  
CASE 318  
STYLE 6  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
15  
Unit  
Vdc  
V
CEO  
COLLECTOR  
3
V
40  
Vdc  
CES  
CBO  
EBO  
V
V
40  
Vdc  
4.5  
200  
Vdc  
1
BASE  
Collector Current − Continuous  
I
C
mAdc  
2
THERMAL CHARACTERISTICS  
EMITTER  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
D
MARKING DIAGRAM  
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
xxx M G  
G
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
1
Derate above 25°C  
xxx = M1J or 1JA  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
M
= Date Code*  
G
= Pb−Free Package  
T , T  
J
−55 to +150  
stg  
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR5 = 1.0 0.75 0.062 in.  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT2369LT1G  
SOT−23  
3,000 /  
(Pb−Free)  
Tape & Reel  
SMMBT2369LT1G  
MMBT2369ALT1G  
SMMBT2369ALT1G  
SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
SOT−23  
3,000 /  
(Pb−Free)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 10  
MMBT2369LT1/D  
 

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