5秒后页面跳转
SMMBT2369ALT1G PDF预览

SMMBT2369ALT1G

更新时间: 2024-01-10 14:51:58
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 94K
描述
Switching Transistors

SMMBT2369ALT1G 数据手册

 浏览型号SMMBT2369ALT1G的Datasheet PDF文件第2页浏览型号SMMBT2369ALT1G的Datasheet PDF文件第3页浏览型号SMMBT2369ALT1G的Datasheet PDF文件第4页浏览型号SMMBT2369ALT1G的Datasheet PDF文件第5页浏览型号SMMBT2369ALT1G的Datasheet PDF文件第6页 
MMBT2369L, MMBT2369AL  
Switching Transistors  
NPN Silicon  
Features  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
www.onsemi.com  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOT−23  
CASE 318  
STYLE 6  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
15  
Unit  
Vdc  
V
CEO  
COLLECTOR  
3
V
40  
Vdc  
CES  
CBO  
EBO  
V
V
40  
Vdc  
4.5  
200  
Vdc  
1
BASE  
Collector Current − Continuous  
I
C
mAdc  
2
THERMAL CHARACTERISTICS  
EMITTER  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
D
MARKING DIAGRAM  
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
xxx M G  
G
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
1
Derate above 25°C  
xxx = M1J or 1JA  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
M
= Date Code*  
G
= Pb−Free Package  
T , T  
J
−55 to +150  
stg  
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR5 = 1.0 0.75 0.062 in.  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT2369LT1G  
SOT−23  
3,000 /  
(Pb−Free)  
Tape & Reel  
SMMBT2369LT1G  
MMBT2369ALT1G  
SMMBT2369ALT1G  
SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
SOT−23  
3,000 /  
(Pb−Free)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 10  
MMBT2369LT1/D  
 

与SMMBT2369ALT1G相关器件

型号 品牌 获取价格 描述 数据表
SMMBT2369LT1G ONSEMI

获取价格

Switching Transistors
SMMBT2907AL ONSEMI

获取价格

General Purpose Transistors PNP Silicon
SMMBT2907ALT1 ONSEMI

获取价格

600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN
SMMBT2907ALT1G ONSEMI

获取价格

General Purpose Transistors PNP Silicon
SMMBT2907ALT3G ONSEMI

获取价格

General Purpose Transistors PNP Silicon
SMMBT3904DW1TG ONSEMI

获取价格

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
SMMBT3904LT1 ONSEMI

获取价格

暂无描述
SMMBT3904LT1G ONSEMI

获取价格

General Purpose Transistor
SMMBT3904LT3G ONSEMI

获取价格

General Purpose Transistor
SMMBT3904TT1G ONSEMI

获取价格

NPN 双极晶体管