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SMMBT2222AWT1G PDF预览

SMMBT2222AWT1G

更新时间: 2023-06-19 14:32:01
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管小信号双极晶体管
页数 文件大小 规格书
6页 116K
描述
NPN 双极晶体管

SMMBT2222AWT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.53
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

SMMBT2222AWT1G 数据手册

 浏览型号SMMBT2222AWT1G的Datasheet PDF文件第2页浏览型号SMMBT2222AWT1G的Datasheet PDF文件第3页浏览型号SMMBT2222AWT1G的Datasheet PDF文件第4页浏览型号SMMBT2222AWT1G的Datasheet PDF文件第5页浏览型号SMMBT2222AWT1G的Datasheet PDF文件第6页 
MMBT2222AWT1  
General Purpose Transistor  
NPN Silicon  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT323/SC70 package which  
is designed for low power surface mount applications.  
http://onsemi.com  
Features  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
MAXIMUM RATINGS  
BASE  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
2
V
CEO  
V
CBO  
V
EBO  
EMITTER  
75  
Vdc  
6.0  
Vdc  
Collector Current Continuous  
I
C
600  
mAdc  
3
SC70  
CASE 419  
STYLE 3  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
1
2
Total Device Dissipation FR5 Board  
P
D
150  
mW  
T = 25°C  
A
Thermal Resistance, JunctiontoAmbient  
R
833  
°C/W  
°C  
q
JA  
MARKING DIAGRAM  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
P1 M G  
G
1
P1 = Specific Device Code  
M = Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT2222AWT1G  
SC70 3000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 Rev. 5  
MMBT2222AWT1/D  

SMMBT2222AWT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2222AWT1G ONSEMI

完全替代

General Purpose Transistor
MMBT2222AWT3G ONSEMI

类似代替

NPN 双极晶体管
MMST2222A-7-F DIODES

功能相似

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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