MMBFJ309L, MMBFJ310L,
SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
http://onsemi.com
Features
2 SOURCE
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
3
Site and Control Change Requirements
GATE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1 DRAIN
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Symbol
Value
25
Unit
Vdc
3
V
DS
SOT−23 (TO−236)
CASE 318
1
Gate−Source Voltage
V
GS
25
Vdc
STYLE 10
2
Gate Current
I
G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
6x M G
G
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
556
°C/W
°C
q
JA
1
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
6x = Device Code
x = U for MMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
= Date Code*
M
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBFJ309LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBFJ310LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBFJ310LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBFJ310LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 5
MMBFJ309LT1/D