MMBFJ309L, MMBFJ310L,
SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
www.onsemi.com
Features
2 SOURCE
• Drain and Source are Interchangeable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
3
GATE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1 DRAIN
Compliant
MAXIMUM RATINGS
3
Rating
Drain−Source Voltage
Symbol
Value
Unit
SOT−23 (TO−236)
CASE 318
V
DS
25
Vdc
1
STYLE 10
2
Gate−Source Voltage
Gate Current
V
GS
25
10
Vdc
I
G
mAdc
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
6x M G
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
G
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
556
°C/W
°C
q
JA
T , T
−55 to +150
J
stg
6x = Device Code
x = U for MMBFJ309L, SMMBFJ309L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
x = T for MMBFJ310L, SMMBFJ310L
= Date Code*
= Pb−Free Package
M
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBFJ309LT1G,
SMMBFJ309LT1G (Pb−Free)
SOT−23
3,000 / Tape &
Reel
MMBFJ310LT1G, SOT−23
SMMBFJ310LT1G (Pb−Free)
3,000 / Tape &
Reel
SMMBFJ310LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 8
MMBFJ309LT1/D